TRANSISTOR LD25 Search Results
TRANSISTOR LD25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TRANSISTOR LD25Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope |
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BUK581-100A OT223 BUK581 -100A TRANSISTOR LD25 | |
LD25CContextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. |
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BUK553-100A/B BUK553 -100A -100B BUK553-1OOA/B LD25C | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack |
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BUK545-60A/B BUK545 BUK545-60A/B | |
k552Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. |
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K552-1OOA/B BUK552 -100A -100B BUK552-100A/B k552 | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack |
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BUK542-100A/B BUK542 -100A -100B OT186 | |
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount |
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BUK566-60H BUK566-60H | |
LD25C
Abstract: GS12-16
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BUK565-200A LD25C GS12-16 | |
LD25CContextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche |
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PHD3055L LD25C | |
TRANSISTOR S 838
Abstract: 600 V logic level fet
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BUK562-100A SQT404 BUK562-100A TRANSISTOR S 838 600 V logic level fet | |
BUK416-1OOAE
Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
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BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140 | |
ht 25 transistor
Abstract: BUK638-500B
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BUK638-500B 711DflSb ODb431S ht 25 transistor | |
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Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
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BUK437-400B Fig13. | |
lg ipm
Abstract: PHT11N06T 25C312
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PHT11N06T OT223 OT223. lg ipm PHT11N06T 25C312 | |
ld 18
Abstract: TRANSISTOR LD25
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BUK482-100A OT223 OT223. ld 18 TRANSISTOR LD25 | |
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Contextual Info: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery |
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0Db431b T0220AB BUK655-500B 711002b aab432D | |
PHB80N06T
Abstract: T404
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PHB80N06T OT404 PHB80N06T T404 | |
PHB65N06T
Abstract: T404
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PHB65N06T OT404 PHB65N06T T404 | |
GIS 110 kVContextual Info: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very |
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BUK9880-55 OT223 OT223. 35\im GIS 110 kV | |
BUK454-500B
Abstract: BUK454 BUK454-500A T0220AB
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BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB M89-1160/RC BUK454-500B BUK454-500A | |
BUK443-60AContextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
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BUK443-60A/B BUK443 OT186 BUK443-60A | |
EUK442Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
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BUK442-100A/B EUK442 -100A -100B | |
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Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance |
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BUK7508-55 T0220AB -ID/100 | |
BUK445
Abstract: BUK445-60A BUK445-60B
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711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B | |
LD25VContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has |
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BUK9510-30 T0220AB LD25V | |