TRANSISTOR L81 Search Results

TRANSISTOR L81 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR L81 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
L8105 Abstract: BUJ105AX Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor	OCR Scan	BUJ105AX L8105 BUJ105AX	PDF
Contextual Info: DATA SHEET ^ENESAS SILICON TRANSISTOR GA1L3M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • Resistors Built-in T Y P E Ri = 4.7 kS2 R2 = 4 .7 k fi • Complementary to GN1 L3M ABSOLUTE M AXIM UM RATINGS	OCR Scan	1988M	PDF
PJ 2166 Contextual Info: DATA SHEET NEC A SILICON TRANSISTOR ELECTRON DEVICE GA1L3M M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE D IM EN SIO N S • Resistors Built-in TYPE in millimeters R i = 4 .7 k i2 R 2 = 4 .7 k i2 • Complementary to GN1 L3M	OCR Scan	1988M PJ 2166	PDF
2135 transistor Abstract: transistor l81 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI L 3 M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE D IM EN SIO N S in millimeters • Resistors Built-in TYPE 2.8 ± 0.2 R, 1.5 = 4 . 7 k£2 R2 = 4 . 7 k£2	OCR Scan	1987M 2135 transistor transistor l81	PDF
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ElfCTRON DEVICE FA1L3M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD F E A TU R E S PA C K AG E D IM E N S IO N S in m illim eters • Resistors Built-in TY PE R i = 4 .7 k£2 O — V v -V R 2 = 4 .7 k f l	OCR Scan		PDF
KSD5002 Abstract: LEA-4A pc120 Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5002 COLOR TV HORIZONTAL OUT PUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector'Base Voltage VCbo«1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSD5002 KSD5002 LEA-4A pc120	PDF
Contextual Info: KSD1589 NPN SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220F • Complement to KSB1098 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit V Collector Base Voltage VcBO 150 Collector Emitter Voltage	OCR Scan	KSD1589 KSB1098 O-220F	PDF
KSD5004 Abstract: ksd50 Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 COLOR TV HORIZONTAL OUT PUT APPLICATIONS HIGH Collector-Bas» Voltage Vcso -1 50 0 V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	KSD5004 -55M50 KSD5004 ksd50	PDF
SA1010 Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE • Complement to K SA1010 ABSOLUTE MAXIMUM RATINGS C haracteristic R ating Sym bol U nit Collector-Base Voltage VcBO 150 V Collector-Emltter Voltage VcEO 100 V Emitter-Base Voltage	OCR Scan	KSC2334 SA1010 SA1010	PDF
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC	OCR Scan	KSC2752 300ns, 00bGb74	PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF
KSC5027 Abstract: KSC5028 KSC5025 KSC5026 KSC5029 LA1LA NPN Transistor 1.5A 400V Contextual Info: SA MS U N G SEMICONDUCTOR INC 14 E D f l 7=^4142 G007Sflfl NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol - Characteristic .Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSC5027 G007Sflfl KSC5027 KSC5028 KSC5025 KSC5026 KSC5029 LA1LA NPN Transistor 1.5A 400V	PDF

transistor 377 Abstract: BD376 BD375 bd379 Contextual Info: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Symbol Characteristic Collector Base Voltage : BD375 Rating V V V ceo 100 45	OCR Scan	BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 BD377 transistor 377 BD376 BD375 bd379	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
transistor BF 697 Abstract: BF 273 transistor transistor l81 Contextual Info: BSV52 . Æ ^Æ N a t i o n a l Di scret e POWER & Signal Technologies Semiconductor BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m Ato 100 mA. Sourced from Process 21. Absolute Maximum Ratings*	OCR Scan	BSV52 bSD113Q bS01130 transistor BF 697 BF 273 transistor transistor l81	PDF
Voltage regulator 78L05 Abstract: BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT Contextual Info: P hilips Sem iconductors ^ 53^31 003002A TM • APX Product specification VHF push-pull power MOS transistor BLF278 AMER P H I L I P S / D I S C R E T E PIN CONFIGURATION FEATU RES • • • • b'lE High power gain Easy power control Good thermal stability	OCR Scan	BLF278 OT262 MCA982 Voltage regulator 78L05 BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT	PDF
Diode LT 5228 Abstract: Diode LT 5230 transistor LT 5230 2N5386 L81400 0/Diode LT 5228 Contextual Info: TYPE 2N5386 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR n FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4301 Z w O • 50 W at 100°C Case Temperature OB * • M ax V ce sat of 0 .6 V at 6 A l c • Typ t,„ of 230 ns at 6 A l c	OCR Scan	2N5386 2N4301 Diode LT 5228 Diode LT 5230 transistor LT 5230 L81400 0/Diode LT 5228	PDF
BF195 equivalent Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416 Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products	OCR Scan		PDF
ULN2003NA Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series \|T r a n s i s t o r \| [ A r r a y ] \|DM O S\| T r a n s i s t o r \|A r r a y \| — Multi-Chip — Module	OCR Scan	TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P	PDF
T108 Abstract: TC-6241 Contextual Info: ÎH'ra'h Com pound Transistor GA1 L3M 4W H !» S / nM o L T W î : mm v ^ f , ( R i = 4 . 7 k£2, R 2 = 4 . 7 kfì) O — V W - R, o G N 1 L 3 M £ =j > 7 ° >J y > 9 ‘J T ' ê Ò E S (T a = 25 °C ) I l 3 9 u a u 3 - 3 • 9 9 i /H g 9 •/ 9 — V cE O	OCR Scan		PDF
SDT 1000 thermistor Abstract: Hall opamp L8150 working hall effect E-L8150 E-L8150TR LV1011 SDT 20 thermistor 50/SDT 1000 thermistor Contextual Info: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.	Original	L8150 17kHz SDT 1000 thermistor Hall opamp L8150 working hall effect E-L8150 E-L8150TR LV1011 SDT 20 thermistor 50/SDT 1000 thermistor	PDF
Hall opamp Abstract: L8150 LV1011 hall sensor 80 L hall sensor fan power transistor motor control working hall effect E-L8150 E-L8150TR SDT 1000 thermistor Contextual Info: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.	Original	L8150 17kHz Hall opamp L8150 LV1011 hall sensor 80 L hall sensor fan power transistor motor control working hall effect E-L8150 E-L8150TR SDT 1000 thermistor	PDF

TRANSISTOR L81 Search Results

TRANSISTOR L81 Result Highlights (5)

TRANSISTOR L81 Datasheets Context Search

2N2222A 338

y51 h 120c

L8105

PJ 2166

2135 transistor

KSD5002

KSD5004

SA1010

MT1115

KSC5027

transistor 377

c5088 transistor

transistor BF 697

Voltage regulator 78L05

Diode LT 5228

BF195 equivalent

ULN2003NA

T108

SDT 1000 thermistor

Hall opamp