KSC2334 Search Results

KSC2334

Abstract: KSA1010
Contextual Info: Inchange Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type KSA1010 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters

Contextual Info: KSA1010 PNP EPITAXIAL SILICON TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE • C om plem ent to KSC2334 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol - 100 V C ollector-E m ltter Voltage V cE O - 100

KSA1010

Abstract: KSC2334
Contextual Info: KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value

KSA1010

Abstract: KSC2334
Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSC2334 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE • Complement to KSA1010 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 150 V Collector-Emitter Voltage V ceo 100 V Emitter-Base Voltage

Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage

Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSA1010 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol 150 V C ollector-E m ltter Voltage VcEO 100 V Em itter-Base Voltage

KSA1010

Abstract: KSC2334
Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

SA1010

Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE • Complement to K SA1010 ABSOLUTE MAXIMUM RATINGS C haracteristic R ating Sym bol U nit Collector-Base Voltage VcBO 150 V Collector-Emltter Voltage VcEO 100 V Emitter-Base Voltage

KSA1010OTU

Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

transistor 15c

Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE T O -220 • Complement to KSA1010 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 1 50 1 00 7 7 15 3 .5 40 1.5 1 50 —5 5 ~ 1 50 V V V A A A W W °C “C Symbol Collector-Base Voltage

KSA1010

Abstract: KSC2334
Contextual Info: KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value

KSC2334

Abstract: KSA1010 npn hfe 120-240
Contextual Info: SavantIC Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type KSA1010 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

Contextual Info: KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value

KSC2334

Abstract: KSA1010 NPN Transistor 10A 100V KSA1010 5V
Contextual Info: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S A 1 0 1 0 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o l le c to r-B a s e V o lta g e C h a r a c te r is tic V cB O Sym bol 150 V C o lle c to r-E m itte r V o lta g e

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,