TRANSISTOR L2 Search Results

TRANSISTOR L2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR L2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
L2SA1365 Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365LT1G L2SA1365LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE sat . . FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1365 180MHz OT-23	PDF
BLV91 Abstract: ferroxcube 1988 mda406 MDA401 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in	Original	BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401	PDF
transistor D 2578 Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting	Original	BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook	PDF
MDA337 Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope	Original	BLU60/12 OT-119 MDA337 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3	PDF
transistor case To 106 Abstract: BUT11A Transistor morocco 1300 Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION	Original	BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300	PDF
BLX94C Abstract: MBH100 BLX94 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended	Original	BLX94C OT122A OT122A BLX94C MBH100 BLX94	PDF
M63828DP Abstract: 16PIN M63828WP 16P4X-A IL500 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500	PDF
MDA342 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope	Original	BLU45/12 OT-119 MDA342	PDF
bfg135 application note Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,	Original	BFG135 OT223 BFG135 MSB002 OT223. R77/03/pp16 771-BFG135-T/R bfg135 application note bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115	PDF
Philips 4312 020 Abstract: blv75 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLV75/12 OT-119) Philips 4312 020 blv75	PDF
mda324 Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327	PDF
TRANSISTOR GENERAL DIGITAL L6 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor	Original	BFG35 OT223 BFG35 MSB002 OT223. R77/03/pp14 771-BFG35-T/R TRANSISTOR GENERAL DIGITAL L6	PDF
L2SA1365 Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE sat . . L2SA1365LT1G S-L2SA1365*LT1G FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1365 S-L2SA1365 180MHz OT-23	PDF

monochrome diagram Abstract: monochrome crt schematic BU407 Text: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.	Original	BU407 BU407 O-220 O-220 monochrome diagram monochrome crt schematic	PDF
transistor D 2395 Abstract: BLV45/12 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLV45/12 OT-119) transistor D 2395 BLV45/12	PDF
transistor DATA REFERENCE handbook Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a	Original	BFG17A OT143 MSB014 OT143. transistor DATA REFERENCE handbook	PDF
d 331 transistor 1080 Abstract: bly87c MSB056 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLY87C SC08a d 331 transistor 1080 bly87c MSB056	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon Transistor L2SC5658M3T5G This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board	Original	L2SC5658M3T5G OT-723 7-inch/3000 OT-723	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG	PDF
SOT123 Package Abstract: BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLV21 SC08a SOT123 Package BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561	PDF
MDA380 Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352" Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS	OCR Scan	BUL216	PDF
Untitled Abstract: No abstract text available Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220	OCR Scan	MJE13007 MJE13007 T0-220	PDF

TRANSISTOR L2 Search Results

TRANSISTOR L2 Result Highlights (5)

TRANSISTOR L2 Datasheets Context Search

germanium transistors PNP

L2SA1365

BLV91

transistor D 2578

MDA337

transistor case To 106

BLX94C

M63828DP

MDA342

bfg135 application note

Philips 4312 020

mda324

TRANSISTOR GENERAL DIGITAL L6

L2SA1365

monochrome diagram

transistor D 2395

transistor DATA REFERENCE handbook

d 331 transistor 1080

Untitled

369D

SOT123 Package

MDA380

Untitled

Untitled