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    TRANSISTOR KN3904 Search Results

    TRANSISTOR KN3904 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KN3904 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 1998. 6. 15 Revision No : 1 1/3


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    PDF KN3904S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Low Leakage Current : ICEX=-50nA Max. , @VCE=-30V, VEB=-3V. ・Low Saturation Voltage N E K ・Complementary to KN3904.


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    PDF KN3906 -50nA -50mA, KN3904. 100kHz

    transistor kn3904

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌLow Leakage Current : ICEX=50nA Max. , @VCE=30V, VEB=3V. ᴌLow Saturation Voltage N E K : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.


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    PDF KN3904 KN3906. transistor kn3904

    transistor kn3904

    Abstract: KN3904 KN3906
    Text: SEMICONDUCTOR KN3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌLow Leakage Current : ICEX=50nA Max. , @VCE=30V, VEB=3V. ᴌLow Saturation Voltage N E K : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.


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    PDF KN3904 KN3906. transistor kn3904 KN3904 KN3906

    ZCA TRANSISTOR

    Abstract: ZCA transistor sot 23 ZCA KN3904S ZCA SOT-23 KN3904S KN3906S
    Text: SEMICONDUCTOR KN3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =0.3V(Max.) ; IC=50mA, IB=5mA. 3 G A 2 D : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V.


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    PDF KN3904S KN3906S. ZCA TRANSISTOR ZCA transistor sot 23 ZCA KN3904S ZCA SOT-23 KN3904S KN3906S

    KN3904

    Abstract: KN3906
    Text: SEMICONDUCTOR KN3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌLow Leakage Current : ICEX=-50nA Max. , @VCE=-30V, VEB=-3V. ᴌLow Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.


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    PDF KN3906 -50nA -50mA, KN3904. 100kHz KN3904 KN3906

    KN3904S

    Abstract: KN3906S
    Text: SEMICONDUCTOR KN3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.


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    PDF KN3906S -50mA, -50nA KN3904S. 100kHz KN3904S KN3906S

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


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    PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


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    PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    transistor kn3904

    Abstract: KN3904 KN3906
    Text: SEMICONDUCTOR TECHNICAL DATA KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.


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    PDF KN3904 KN3906. transistor kn3904 KN3904 KN3906

    KN3904S

    Abstract: KN3906S
    Text: KEC KOREA ELECTR ON ICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, Veb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.


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    PDF KN3904S KN3906S. 10x8x0 KN3904S KN3906S

    KN3904

    Abstract: KN3906
    Text: KEC SEMICONDUCTOR TECH NICAL D A T A KOREA ELECTRONICS CO.,LTD. KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current • I cex=50n A M a x . , @ V ce-3 0 V , V eb-3 V . • Low Saturation Voltage


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    PDF KN3904 KN3906. KN3904 KN3906

    KN3904S

    Abstract: KN3906S kec marking SOT
    Text: SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V .


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    PDF KN3904S KN3906S. 10x8x0 KN3904S KN3906S kec marking SOT

    KN3904

    Abstract: KN3906
    Text: SEMICONDUCTOR TECHNICAL DATA KN3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. , @V ce=-30V, V eb=-3V. • Low Saturation Voltage : V CE(sat)=_ 0 .4 V (Max.) @Ic=-50mA, IB=-5mA.


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    PDF KN3906 -50nA -50mA, KN3904. KN3904 KN3906

    ZAA SOT-23

    Abstract: KN3904S KN3906S zaa 04 ZAA SOT23
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current A B C D E G H J K L M N P : IcEx=-50nA Max. @ VCe =-30V , V eb =-3V .


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    PDF KN3906S -50mA, KN3904S. ZAA SOT-23 KN3904S KN3906S zaa 04 ZAA SOT23

    KN3904S

    Abstract: KN3906S
    Text: SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current : IcE x=-50nA M ax. @ VCe =-30V , V eb = -3V . • Low Saturation Voltage


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    PDF KN3906S -50nA -50mA, KN3904S. KN3904S KN3906S

    KN3906

    Abstract: KN3904
    Text: K E SEMICONDUCTOR C TECH NICAL D A T A KOREA ELECTRONICS CO.,LTD. KN3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current • I cex = - 5 0 n A M ax. , @ V ce - _ 3 0 V , V e b - _ 3 V .


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    PDF KN3906 -50nA -50mA, KN3904. 100kHz KN3906 KN3904