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    TRANSISTOR KC 2026 Search Results

    TRANSISTOR KC 2026 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KC 2026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    930 dtl

    Abstract: la 4508 ic schematic diagram sn524a eel 19 2005 transformer sn15846n J 5027-R sn15846 CREATIVE 5507 transistor kc 2026 Jacinto
    Text: Notes on This Fi rst Edition This first edition of TI's Integrated Circuits catalog contains currently published data sheets covering SOLID CIRCUIT semiconductor networks. As new data sheets are published, they will be distributed for insertion in the appropriate sections of this basic Tightleaf®


    Original     		PDF

    smd transistor marking EY

    Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
    Text: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1


    Original     		PDF lTio2/16E MIL-B-195C SPECITICAT20N 2N343 NIL-S-195Cr2 qF02ifi+ 2N342 411wII. 2N342 2N342A, smd transistor marking EY SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11

    TRANSISTOR 2n65s

    Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
    Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification


    Original     		PDF MIL-s-19500/74E MIL-S-19500/74D 2N497, 2N498, 2N656, 2N657 2N656 TRANSISTOR 2n65s 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22

    Device Test

    Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
    Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance


    Original     		PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan     		PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    transistor kc 2026

    Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
    Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,


    OCR Scan     		PDF MIL-S-19500/340 2N2079A Adc-19500/340 2N2079A 2N173 2N2079 2N277 2N2080, 2N2080A 2N278 transistor kc 2026 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026

    icl 2025

    Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
    Text: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit


    OCR Scan     		PDF G00T175 47kohms) T-91-20 SC-43 icl 2025 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713

    transistor kc 2026

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 32E D ? cl li 7 G 7 k i DOGTlñ? T - tf- X l P t *'*' .i ‘ ' , V*-.-. - -‘¿-.'“/.'’"y-S S P N P Epitax ia l P la n a r S ilic o n C o m p o s it e T ra n s is to r 2029A Differential Amp Applications 975C Applications


    OCR Scan     		PDF SC-43 transistor kc 2026

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		PDF DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552

    transistor kc 2026

    Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
    Text: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart­


    OCR Scan     		PDF MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt

    sanyo 2033

    Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
    Text: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.


    OCR Scan     		PDF 1707k T-27-/S" 2SA608 2SC536 2SA608. 2SA608SPA 2SA608NP 2SA608KNP T-91-20 SC-43 sanyo 2033 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP

    transistor c2274

    Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
    Text: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).


    OCR Scan     		PDF 50/80V) 500mA) 2SA984 T-91-20 SC-43 transistor c2274 transistor a984 A984 sc2274 transistor sc2274 c2274 2SC2274 C2274 E C2274K

    2N1652

    Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
    Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­


    OCR Scan     		PDF MIL-S-19500/219A mil-S-19500/219 2N1651, 2N1652, 2N1653 Ic-25A 2N1652 2N1653 MIL-STD-780 2N1651 Germanium power

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    transistor kc 2026

    Abstract: RNS-D Germanium Transistor M/transistor kc 2026
    Text: MIL-S-19500/68A • a Miv "\o££ J *^rw w SUPERSEDING M IL -T -19500/68 Sig C 10 F ebruary 1959 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE;, TRANSISTOR, 2N- i2o> -PNP* GERMANIUM* SWITCHING T his specification is m andatory for use by a ll D epart­ m ents and A gencies of the D epartm ent of Defense.


    OCR Scan     		PDF MIL-S-19500/68A MIL-T-19500/68 MIL-STD-750 MlL-S-iS500/68A MIL-S-19500. MIL-S-19500 transistor kc 2026 RNS-D Germanium Transistor M/transistor kc 2026

    2N1016B

    Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
    Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    inverter ccfl SP 5001 IC INVERTER

    Abstract: free transistor equivalent book 2sc 930 dtl transistor kc 2026 ic est 7502 B1027 transistor SD 5024 SLA 5017 850 va inverter schematic diagram 845N
    Text: INTEGRATED CIRCUITS CATALOG Notes on This First Edition T his first e d itio n of T I ’s In te g ra te d C irc u its c atalo g co n ta in s currently published data sheets covering SO LID C IR C U IT semi­ conductor networks. As new data sheets are published, they will be dis­


    OCR Scan     		PDF

    d 3151

    Abstract: marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s
    Text: M IL -S -19500/17 8B N AVY 29 May 1964_ S u p e r s e d in g M IL -S -19500/178A (NAVY) 13 O ctober 1961 (See 6.2) MILITARY SPECIFICATION TRANSISTOR, PNP, CERMAMUM TYPF 2N11G5 1. hi SCOPE 1.1 Scop«.- This specification covers the d tU t. requirem ents (or a ijerm aniuin, PNP tra n sisto r and is


    OCR Scan     		PDF MIL-S-19500/17 MIL-S-19500/178A 2N11G5 MIL-S-19500, d 3151 marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s

    transistor kc 2026

    Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
    Text: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    2N914

    Abstract: 307G marking YJ transistors
    Text: MIL-S-19500/373A 10 August 1972 dUi'X.ROC.UU'iU M IL-S-19500/373 USAF 31 May 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. NPN. SILICON, SWITCHING TYPES 2N914 AND TX2N914 This specification Is approved for use by all D epart­ ments and Agencies of the Departm ent of Defense.


    OCR Scan     		PDF MIL-S-19500/373A MIL-S-19500/373 2N914 TX2N914 307G marking YJ transistors