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    TRANSISTOR K8A65D Search Results

    TRANSISTOR K8A65D Result Highlights (5)

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    TRANSISTOR K8A65D Datasheets Context Search

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    transistor K8A65D

    Abstract: k8a65 K8A65D
    Contextual Info: TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


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    TK8A65D transistor K8A65D k8a65 K8A65D PDF

    K8A65D

    Abstract: transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS
    Contextual Info: TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original
    TK8A65D K8A65D transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS PDF

    K8A65D

    Abstract: TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode
    Contextual Info: TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original
    TK8A65D K8A65D TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode PDF

    Contextual Info: TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original
    TK8A65D PDF