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Toshiba America Electronic Components TK8A65D(STA4,Q,M) MOSFET N-CH 650V 8A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK8A65D(STA4,Q,M)	Bulk	26		1	1 $2.84 10 $2.84 100 $1.3629 1000 $1.01324 10000 $0.9675	Buy Now
Avnet Americas	TK8A65D(STA4,Q,M)	Tube		32 Weeks	50	1 - 10 - 100 $0.90558 1000 $0.85914 10000 $0.85914	Buy Now
Mouser Electronics	TK8A65D(STA4,Q,M)		57			1 $2.63 10 $2.53 100 $1.29 1000 $1 10000 $1	Buy Now
Toshiba America Electronic Components TK8A65D(STA4,X,M) PWRMOSFET NCHANNEL (Alt: TK8A65D(STA4,X,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	TK8A65D(STA4,X,M)		50	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K8A65D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K8A65D Abstract: TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	TK8A65D K8A65D TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode	PDF
Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK8A65D	PDF
k8a65d Abstract: k8a65 TK8A65D Contextual Info: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	TK8A65D SC-67 2-10U1B k8a65d k8a65 TK8A65D	PDF
transistor K8A65D Abstract: k8a65 K8A65D Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	TK8A65D transistor K8A65D k8a65 K8A65D	PDF
K8A65D Abstract: transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	TK8A65D K8A65D transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS	PDF
K8A65D Abstract: k8a65 TK8A65D Contextual Info: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	TK8A65D SC-67 2-10U1B K8A65D k8a65 TK8A65D	PDF