TRANSISTOR K6A60D Search Results
TRANSISTOR K6A60D Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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| LM395T/NOPB |
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Ultra Reliable Power Transistor 3-TO-220 0 to 125 |
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| ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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| ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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| LP395Z/NOPB |
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Ultra Reliable Power Transistor 3-TO-92 -40 to 125 |
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TRANSISTOR K6A60D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K6A60DContextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) |
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TK6A60D K6A60D | |
K6A60D
Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
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TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 | |
K6A60D
Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
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TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A | |
k6a60dContextual Info: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) |
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TK6A60D k6a60d |