TRANSISTOR K13A60D Search Results

TRANSISTOR K13A60D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K13A60D Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	TK13A60D K13A60D	PDF
K13A60D Abstract: k13a60 Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	TK13A60D K13A60D k13a60	PDF
k13a60 Abstract: K13A60D TK13A60D k13a 90VL Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	TK13A60D k13a60 K13A60D TK13A60D k13a 90VL	PDF
K13A60D Abstract: TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	TK13A60D K13A60D TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A	PDF