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    K13A60D Price and Stock

    Toshiba America Electronic Components TK13A60D(STA4,Q,M)

    MOSFET N-CH 600V 13A TO220SIS
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    DigiKey TK13A60D(STA4,Q,M) Tube
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    EBV Elektronik TK13A60D(STA4,Q,M) 143 Weeks 2,500
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    Toshiba America Electronic Components TK13A60D

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    Bristol Electronics TK13A60D 3,150
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    Toshiba America Electronic Components TK13A60DQM

    Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA TK13A60DQM 2,348
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    K13A60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K13A60D

    Abstract: No abstract text available
    Text: K13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D PDF

    K13A60D

    Abstract: k13a60
    Text: K13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D k13a60 PDF

    k13a60

    Abstract: K13A60D TK13A60D k13a 90VL
    Text: K13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D k13a60 K13A60D TK13A60D k13a 90VL PDF

    K13A60D

    Abstract: k13a60 TK13A60D VDD400 IAR13
    Text: K13A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.33 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5 S (標準)


    Original     		TK13A60D SC-67 2-10U1B 20070701-JA K13A60D k13a60 TK13A60D VDD400 IAR13 PDF

    K13A60D

    Abstract: TK13A60D k13a60 VDD400 k13a
    Text: K13A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.33 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5 S (標準)


    Original     		TK13A60D SC-67 2-10U1B K13A60D TK13A60D k13a60 VDD400 k13a PDF

    K13A60D

    Abstract: TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A
    Text: K13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A PDF