TRANSISTOR K 425 Search Results

TRANSISTOR K 425 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR K 425 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N4428 Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 1 2N4428 *a A 4>b «bi 4>0 »Dt h 1 k 1 I, 1: P Q MAXIMUM RATINGS 425mA Ic VCE 30V	Original	2N4428 425mA 2N4428	PDF
ic 556 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage RBE = 10 kΩ VCER 2 CASE 318 – 08, STYLE 6	Original	BSS63LT1 236AB) ic 556	PDF
AUR500 Abstract: ASI10550 Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 500 is Designed for UHF Radar and Pulsed signal apps PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J	Original	AUR500 ASI10550 AUR500 ASI10550	PDF
ASI10549 Abstract: AUR300 Text: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J G I N MAXIMUM RATINGS L M 21.6 A	Original	AUR300 ASI10549 ASI10549 AUR300	PDF
ASI10686 Abstract: 4X06 Text: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 21.6 A IC 65 V VCBO 65 V	Original	ASI10686 ASI10686 4X06	PDF
K1167 Abstract: ASI10687 transistor A 584 Text: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 43.2 A IC 65 V VCBO 65 V	Original	ASI10687 K1167 ASI10687 transistor A 584	PDF
Untitled Abstract: No abstract text available Text: Circuit Board Thermocouple Connectors Shown 2x Actual Size Miniature Standard and Miniature Sizes; Type PCC GlassFilled Nylon 220oC 425oF Standard MADE IN USA ߜ For OEM Uses ߜ Attaches Directly to Circuit Board ߜ Perfect for Handheld Thermometers ߜ J, K, T and E	Original	220oC 425oF) PCC-SMP-K-100-R,	PDF
transistor 2sk Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k	OCR Scan	2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796	PDF
2SD1950 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed f o r general-purpose applications requiring High DC C u rrent Gain. This is suitable fo r ail k in d o f d riv in g o r m uting.	OCR Scan	2SD1950 2SD1950	PDF
MSM6375 Abstract: No abstract text available Text: O K I Semiconductor MSM6375 DEMO BOARD MSM6375 Demonstration Board BOARD DESIGN Power switch Frequency control variable resistor for RC oscillation Speaker amplifier transistor x 2 Power LED Speaker jack Speaker check pin Speaker amplifier (MSC1192) Sound volume control	OCR Scan	MSM6375 20-pin FC20A2MS MSC1192)	PDF
Untitled Abstract: No abstract text available Text: K SR 2013 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1«2.2ka, R2»47kQ) • Complement to KSR1013 ABSOLUTE MAXIMUM RATINGS (TA> 25<C )	OCR Scan	KSR1013 -10/iA, -100mA, -10mA, -100M -10mA	PDF
74LSI38 Abstract: 6132 RAM 74LSI Z6132 Z80 application note dynamic ram Text: Z6132 4K x 8 Quasi-Static RAM Product Specification K Zilog March 1981 Description The Zilog Z6132 is a + 5 V intelligent MOS dynamic RAM organized as 4096 words by eight bits. Although it uses single-transistor dynamic storage cells, the Z6132 effectively	OCR Scan	Z6132 Z6132-3 Z6132-4 4096x8-Bit Z6132-4 74LSI38 6132 RAM 74LSI Z80 application note dynamic ram	PDF
sot 86 marking CODE e3 Abstract: No abstract text available Text: f ï ^ l HEW LETT WFnÆP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Perform ance Bipolar T ransistor Optim ized for Low Current, Low Voltage O peration • 900 MHz Performance:	OCR Scan	AT-30511 AT-30533 AT-30533 OT-23 OT-143 OT-000 sot 86 marking CODE e3	PDF
RT1P141C Abstract: 6j1 06 RT1N141X RT1P141M RT1P141U RT1P141X RT1P141 Text: RT1 P I 4 1 X SERIES J T sistor> For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE RT1P141X is a on* chip transistor with built-in bias resistor.NPN type is RT1N141X DRAWING RT1P141U U N IT m m RT1P141C FEATURE -Built-in bias resistor [R1 = 10kQ R2 = l0 k ft .	OCR Scan	RT1P141X HT1P141X RT1N141X RT1P141U RT1P141M SC-70 RT1P141Ã RT1P141C 6j1 06 RT1N141X RT1P141M RT1P141U RT1P141	PDF

2N7091 Abstract: No abstract text available Text: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1	OCR Scan	2N7091 O-257AB 2N7091	PDF
Untitled Abstract: No abstract text available Text: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4910E F4310E F4914E F4918E F4919E MGF4910E	PDF
Untitled Abstract: No abstract text available Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,	OCR Scan	2SK1123	PDF
2SD773 Abstract: transistor 2sD773 2SB733 2SD773, transistor Text: NEC NPN SILICON TRANSISTOR 2SD773 D E S C R IP T IO N The 2 S D 7 7 3 is designed for use in driver and output stages of audio frequency amplifiers. P A C K A G E D IM E N S IO N S in millimeters inches FEATURES • High Total Power Dissipation P j • High D C Current Gain	OCR Scan	2SD773 2SD773 transistor 2sD773 2SB733 2SD773, transistor	PDF
transistor tt 2222 Abstract: TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor BLV58 IJBA970 Text: Philips Semiconductors • 7 1 1 0 6 2b P O b ER b l bME ■ P HIN ^^Productspecifica«^ UHF linear push-pull power _ transistor ph ilips international FEA TU RES • High power gain d Q U IC K R E F E R E N C E DATA R F performance at T h = 25 CC in a common emitter test circuit.	OCR Scan	711D6Sb BLV58 BLV58 OT289 OT289 transistor tt 2222 TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor IJBA970	PDF
Untitled Abstract: No abstract text available Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8	OCR Scan	CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA	PDF
ME0412 Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103 Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V	OCR Scan	60Vmin ME0411 ME0412 ME0413 200mW 425mW 8822 TRANSISTOR ME0413 20MHZ 4102 transistor ME4103	PDF
transistor T K 2056 Abstract: K 2056 transistor transistor K 2056 Text: SANYO SEMICONDUCTOR 12E CORP D \| 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage	OCR Scan	SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056	PDF
yx 861 Abstract: zener FR diode 2ao2 diode BAND Text: n 1. v ï — v - n Package List m Discrete Semiconductor Devices — □ - V 'à •+- I "N « A te irv u m « -£ o K S *- « > fa’ V •fr -w Panasonic - 219 - il H Item S M ini 5-pin S M ini(4-pin) U n it mm 2 UP 1 .1 0 4251 -i 1 25 îO 1_ 0 425	OCR Scan	LN1871 tN1371GC6- LN1371 yx 861 zener FR diode 2ao2 diode BAND	PDF
m28 transistor Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z	OCR Scan	b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E	PDF

TRANSISTOR K 425 Search Results

TRANSISTOR K 425 Result Highlights (5)

TRANSISTOR K 425 Datasheets Context Search

2N4428

ic 556

AUR500

ASI10549

ASI10686

K1167

Untitled

transistor 2sk

2SD1950

MSM6375

Untitled

74LSI38

sot 86 marking CODE e3

RT1P141C

2N7091

Untitled

Untitled

2SD773

transistor tt 2222

Untitled

ME0412

transistor T K 2056

yx 861

m28 transistor