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    TRANSISTOR K 1254 Search Results

    TRANSISTOR K 1254 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 1254 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA123YT

    Abstract: PDTC123YT
    Text: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 — 11 June 2004 Objective data 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors


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    PDF PDTA123YT PDTC123YT. PDTA123YT PDTC123YT

    Untitled

    Abstract: No abstract text available
    Text: PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ZT. 1.2 Features • Built-in bias resistors


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    PDF PDTA113ZT PDTC113ZT.

    Untitled

    Abstract: No abstract text available
    Text: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors


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    PDF PDTA123YT PDTC123YT.

    PDTA123YT

    Abstract: PDTC123YT
    Text: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors


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    PDF PDTA123YT PDTC123YT. PDTA123YT PDTC123YT

    PDTA113ET

    Abstract: PDTC113ET
    Text: PDTA113ET PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 03 — 20 July 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ET. 1.2 Features • Built-in bias resistors


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    PDF PDTA113ET PDTC113ET. PDTA113ET PDTC113ET

    Untitled

    Abstract: No abstract text available
    Text: PDTA113ET PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 02 — 15 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ET. 1.2 Features • Built-in bias resistors


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    PDF PDTA113ET PDTC113ET.

    Untitled

    Abstract: No abstract text available
    Text: PDTA113ET PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 16 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ET. 1.2 Features • Built-in bias resistors


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    PDF PDTA113ET PDTC113ET.

    PDTA113ZT

    Abstract: PDTC113ZT
    Text: PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ZT. 1.2 Features • Built-in bias resistors


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    PDF PDTA113ZT PDTC113ZT. PDTA113ZT PDTC113ZT

    Untitled

    Abstract: No abstract text available
    Text: PDTA115TT PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 01 — 23 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC115TT. 1.2 Features • Built-in bias resistors


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    PDF PDTA115TT PDTC115TT.

    PDTA115TT

    Abstract: PDTC115TT PDTC115
    Text: PDTA115TT PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 01 — 23 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC115TT. 1.2 Features • Built-in bias resistors


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    PDF PDTA115TT PDTC115TT. PDTA115TT PDTC115TT PDTC115

    PDTA115TT

    Abstract: PDTC115TT
    Text: PDTA115TT PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 03 — 7 September 2004 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC115TT. 1.2 Features • Built-in bias resistor


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    PDF PDTA115TT PDTC115TT. PDTA115TT PDTC115TT

    mmbt3904 motorola

    Abstract: 2N3904 for 2n3904 SST3904 TRANSISTOR noise figure measurements 2N3904 transistor data sheet free download 496k AN1944 FMMT3904CT SMB3904
    Text: A/D and D/A CONVERSION/SAMPLING CIRCUITS Application Note 1944: Mar 21, 2003 MEASUREMENT CIRCUITS TEMPERATURE SENSORS Temperature Monitoring Using the MAX1253/54 and MAX1153/54 The MAX1253/54 and MAX1153/54 system monitors are a low cost solution for monitoring multiple temperatures in a system. This application note explains how to


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    PDF MAX1253/54 MAX1153/54 MAX1153/54 MAX1253/1254 MAX1153/1154 CMPT3904 MMBT3904 SST3904 mmbt3904 motorola 2N3904 for 2n3904 SST3904 TRANSISTOR noise figure measurements 2N3904 transistor data sheet free download 496k AN1944 FMMT3904CT SMB3904

    for 2N3904

    Abstract: transistor a 1944 SMB3904 TRANSISTOR k 1254 TRANSISTOR noise figure measurements CMPT3904 MMBT3904 SST3904 mmbt3904 motorola transistor temperature sensor motorola
    Text: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: temperature, thermometer, diode, thermistor, thermister, ADC, die temp, temp, system monitor, diode sensor, analog to digital converter Mar 21, 2003


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    PDF MAX1253/54 MAX1153/54 MAX1153/54 orSST3904 SMB3904 FMMT3904CT-ND com/an1944 MAX1153: MAX1154: for 2N3904 transistor a 1944 SMB3904 TRANSISTOR k 1254 TRANSISTOR noise figure measurements CMPT3904 MMBT3904 SST3904 mmbt3904 motorola transistor temperature sensor motorola

    driver transistor hfe150

    Abstract: 530k resistor HT817D0
    Text: HT817D0 16.8-Second LOG-PCM Speech Features • · · · · · · · · Operating voltage: 3.6V~5.0V Directly drives an external transistor Low standby current 1mA typ. for VDD=3V Minimal external components 508 words table ROM for key functions Programmable silence length and end-pulse


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    PDF HT817D0 330ms KEY12 driver transistor hfe150 530k resistor HT817D0

    CA3KN31BD

    Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
    Text: CONTROL GEAR/DIN TERMINALS AC contactors page 239 Time delay control blocks page 240 DIN rail terminals page 248 Thermal overload relays page 239 Auxiliary contact blocks 241 Coil suppressor modules 241 Contact blocks 239-241, 244 Contactors 239-241 Control relays


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    PDF UL94V-0 CIM/8W-D10 CIM/R4-WB-S-24 CIM/R8-WB-S-24 CIM/R16-WB-S-24 16-way CA3KN31BD LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k

    TRANSISTOR k 1254

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


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    PDF BUK78150-55 OT223 OT223. TRANSISTOR k 1254

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


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    PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    25CC

    Abstract: MJE18206 MJF18206 J280 LB013
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS


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    PDF MJE/MJF18206 O-220 MJE18206 AN1040. 25CC MJF18206 J280 LB013

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Linear Products Brushless DC motor drive circuit TDA5145 FEATURES APPLICATIONS • Full-wave commutation using push/pull drivers at the output stages without position sensors • General purpose spindle driver e.g.:


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    PDF TDA5145 TDA5145

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    PDF TV10N100E/D TV10N MTV10N100E/D

    Application Note tda5145

    Abstract: Star Delta Control circuit for 3 phase motor TDA5145 TDA5145T TDAS145 3 phase brushless dc motor delta motor motor drive ic star delta connection circuit diagrams star delta diagram motor
    Text: Product specification Philips Semiconductors Linear Products Brushless DC motor drive circuit TDA5145 FEATURES APPLICATIONS • Full-wave commutation using push/pull drivers at the output stages without position sensors • General purpose spindle driver e.g.:


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    PDF TDA5145 TDA5145 711002b Application Note tda5145 Star Delta Control circuit for 3 phase motor TDA5145T TDAS145 3 phase brushless dc motor delta motor motor drive ic star delta connection circuit diagrams star delta diagram motor