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    TRANSISTOR JC 817 Search Results

    TRANSISTOR JC 817 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JC 817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN105 infineon

    Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology
    Text: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs


    Original     		PDF COMP2006. AN105, BCR401R, BCR402R, BCR401W, BCR402W, BCR401U, BCR402U, BCR405U, BCR450, AN105 infineon BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology

    BSV64

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64


    Original     		PDF M3D110 BSV64 MAM317 SCA54 117047/00/03/pp8 BSV64 BP317

    Transistor BC177

    Abstract: SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor


    Original     		PDF M3D125 BC177 BC107. MAM263 SCA54 117047/00/03/pp8 Transistor BC177 SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor

    AM81719-040

    Abstract: No abstract text available
    Text: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LFL M228


    Original     		PDF AM81719-040 AM81719-040

    transistor 2n1711

    Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor


    Original     		PDF M3D111 2N1711 MAM317 SCA54 117047/00/02/pp8 transistor 2n1711 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips

    ic str 6707

    Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor


    Original     		PDF M3D111 2N3019 MAM317 SCA54 117047/00/02/pp8 ic str 6707 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317

    2108 npn transistor

    Abstract: BFX34 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34


    Original     		PDF M3D111 BFX34 MAM317 SCA54 117047/00/02/pp8 2108 npn transistor BFX34 BP317

    BP317

    Abstract: LAE4002S SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4002S


    Original     		PDF LAE4002S OT100 SCA53 127147/00/02/pp8 BP317 LAE4002S SC15

    SOT-100

    Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R


    Original     		PDF LAE4001R OT100 SCA53 127147/00/02/pp8 SOT-100 BP317 LAE4001R SC15 transistor jc 817 sot100

    transistor 2n1613

    Abstract: 2N1613 2n1613 st BP317 1na120
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor


    Original     		PDF M3D111 2N1613 MAM317 SCA54 117047/00/02/pp8 transistor 2n1613 2N1613 2n1613 st BP317 1na120

    Untitled

    Abstract: No abstract text available
    Text: M.S. KENNEDY CORP. DUAL HIGH POWER OP-AMP 2541 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 10 Amps Peak • Wide Power Supply Range - ±10V to ±40V • On Board Current Limit • Fet input • Isolated Case


    OCR Scan     		PDF 2541B Mil-H-38534

    sk1461

    Abstract: sk 100 transistor
    Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input


    OCR Scan     		PDF 1461B MII-H-38534 sk1461 sk 100 transistor

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY fl S CORP M ^K M.S. KENNEDY CORP. b 3E D 5134300 00001Ö2 HIGH POWER AMPLIFIER b34 • HSK 161 8170 Thompson Road • Cicero, N.Y. 13039 (315) 699-9201 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class “C” Output Stage


    OCR Scan     		PDF MSK-161 MSK-161B Mil-H-38534

    TRANSISTOR BC 137

    Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
    Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded


    OCR Scan     		PDF BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON ^ 0 û ^ @ E Œ iM ( 2 M ( S S TD A 8179F TV VERTICAL DEFLECTION BOOSTER AD V A N C E DATA POWER AMPLIFIER FLYBACK SUPPLY VOLTAGE SEPARATED THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTIO N Designed for Monitors and high performance TVs,


    OCR Scan     		PDF 8179F TDA8179F TDA8179F A8179F

    Untitled

    Abstract: No abstract text available
    Text: M.S. KENNEDY CORP. POWER OPERATIONAL AMPLIFIER 8170 Thompson Road • Cicero, N.Y. 13039 115 315 699-9201 FEATURES: • • • • • High Output Current — 15A peak Ultra Low Thermal Resistance — 0.28°C /W Excellent Linearity — Class A/B Output


    OCR Scan     		PDF MSK-115 MSK-115B Mil-H-38534

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


    OCR Scan     		PDF CB-19 BUX45 transistor et 460

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING


    OCR Scan     		PDF AM81719-030

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    transistor jc 817

    Abstract: 2n5680 WCB410
    Text: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO


    OCR Scan     		PDF 00HS177 2N5680 PINNING-TO-39 transistor jc 817 2n5680 WCB410

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


    OCR Scan     		PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


    OCR Scan     		PDF 711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971

    transistor jc 817

    Abstract: MG150q2yk1 470G jc 817
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling


    OCR Scan     		PDF MG150Q2YK1 109B1A 00A/jus transistor jc 817 MG150q2yk1 470G jc 817