TRANSISTOR J 59 Search Results

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

QM15TB-24B

Abstract: A3102 QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM15TB-24B MEDIUM POWER SWITCHING USE _ iNSULATED TYPE j f •i i i • Ic Collector current. 15A • V cex Collector-emitter voltage. 1200V • hFE DC current gain. 250

qm75ha-h

Contextual Info: MITSUBISHI TRANSISTOR MODULES j I QM75HA-H | HIGH POWER SWITCHING USE ! INSULATED TYPE j QM75HA-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 6 0 0 V DC current gain. 75

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

5n06v

Abstract: 5n06 TMOS E-FET AG3B CASE369A
Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

wacom

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: 2N3822 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency amplifier applications. The 2N3822 features low gate leakage current and low input capacitance.

Contextual Info: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA

BFS22A

Contextual Info: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran­

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

Contextual Info: r z j SGs m o M s o N TEA2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

Contextual Info: 2N3055SPL MJ2955SPL 2N3055SPL MJ2955SPL NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIM UM RATINGS Collector-base voltage open emitter

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Contextual Info: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TB-2HB ! MEDIUM POWER SWITCHING USE | _ INSULATED TYPE j QM15TB-2HB • • • • • lc Collector current.15A Vcex Collector-emitter voltage.1000V hFE

n092

Abstract: 2SB1097 2SD1588 6111N
Contextual Info: m m p°p m n ' > ' J U > ' < r7 — h 7 > > X ? Silicon P o w e r T ra n s is to r 2SB1097 •; a > h ^ p n f ë J S i J C K -fS iS « <£ X - f y x ^ ^ > ? m iif f i PNP Silicon Epitaxial Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use

Contextual Info: h 7 > V ^ £ /Transistors 2SD1506 2SD1506 7 V -/B N P N y ' J i > h ? > y * $ 1SUl§}j£it:£j*^llif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ J fJ ^ iilO /D im e n s io n s U n it: mm V ;V vHt 1) V CE ( s a i) = 0 .5V (T yp.)

BFG65 transistor

Contextual Info: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband

t 30 55el

Abstract: LL903 transistor 81 120 w 63 LL-903 PH1214-40M PH1214-55EL ph1214-40 transistor 81 120 w 55 1035 transistor PJ 81
Contextual Info: an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 22 85 J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

2SC594

Abstract: transistor WLM Produced by Perfect Crystal Device Technology
Contextual Info: 5 / 'J D > N P N X t : ^ 5 / ? J W B S 5 > y ^ P C T S Ä 2 s c 594 ^ IL IC O N NPN EPITAXIAL TRANSISTOR Æ O x x m (PCT it X PROCESS) m m INDUSTRIAL APPLICATIONS X 4 » * S S R o High Frequency Amplifier and Video Amplifier Applications o High Speed Snitching Application»