KTC3620S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P
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KTC3620S
KTC3620S
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IRG4PC50KD
Abstract: IRGPC50KD2 IRGPC50MD2
Text: PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V
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IRG4PC50KD
IRG4PC50KD
IRGPC50KD2
IRGPC50MD2
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z
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2SC4843
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buz72a
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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b53131
BUZ72A
BUZ72A_
T-39-11
0D14443
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LP1983
Abstract: motorola 039
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ
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LP1983
MRF901
Temperat13
IS22I
LP1983
motorola 039
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Helipot POTENTIOMETER
Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Text: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION
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MIL-S-19500/388B
MIL-S-19500/388A
2N4947,
2N4948,
2N4949
MIL-S-19500.
Helipot POTENTIOMETER
2N4947
transistor WL 431
Helipot
2N4947 JAN
2N4948 JANTX
TXAL118B.388B
2N4948
2n4948 jan
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BFG65 transistor
Abstract: No abstract text available
Text: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband
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BFG65
OT103)
BFG65 transistor
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2N3741
Abstract: No abstract text available
Text: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C
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2N3741
2N3741
RAD8-89
RAD190
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transistor te 2443
Abstract: 2N3740A
Text: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C
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2N3740A
2N3740A
RAD8-89
RAD190
transistor te 2443
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NTE74LS244
Abstract: NTE74HCT244 NTE74HC259
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register Serial Input K m ^ Serial Input J £ 2 ^ v cc Shift/Load 3 Input H Input A E QA | H QH Input B [ ^ OB | NTE74221, 16-Lead DI P, See Diag. 249
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NTE74199
24-Lead
NTE74221,
16-Lead
NTE74C221,
NTE74LS221
NTE74C240,
20-Lead
NTE74HC240,
NTE74LS244
NTE74HCT244
NTE74HC259
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LA 7687 a
Abstract: No abstract text available
Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)
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ENN6328
2SC5551
300mA)
2SC5551]
LA 7687 a
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ld1127
Abstract: transistor 45 f 123 BUZ72A T0220AB
Text: N AMER PHILIPS/DISCRETE ObE J> PowerMOS transistor • LbSBTBl 001443? " B U Z 7 2 A T " T - 3 1 - May 1987 G ENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in Sw itched Mode Power Supplies
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BUZ72A
T-31-:
T0220AB;
BUZ72A_
0D14M43
ld1127
transistor 45 f 123
BUZ72A
T0220AB
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TACAN transistor
Abstract: Thomson-CSF amplifier Solid State Microwave
Text: G S-THOMSON Ü4C D 1 7 ^ 5 ^ 3 7 gOOOlBS 5 SOLID STATE MICROWAVE si-or I 1522-2 ; THOMSON-CSF COMPONENTS CORPORATION j Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1522-2 is a gold metalized, silicon NPN power transistor.
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SD1522-2
EFF/28V
DME/28V
TACAN/28V
TACAN transistor
Thomson-CSF amplifier
Solid State Microwave
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NTE74HC393
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead DIP, See Diag. 249 Quadruple J-K Flip-Flop CURH J3 v c c ij 3 B 4J 04K 1KH 1Q Q 0 40 2Q Q g 2KH 2J Q GND Q B NTE74S387 16-Lead Dl P, See Diag. 249 1024-Bit (256 x 4) Open Collector PROM,
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NTE74376
16-Lead
20-Lead
NTE74HC377,
NTE74LS377
NTE74LS378
NTE74LS386
14-Lead
NTE74S387
NTE74HC393
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transistor bl 187
Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Text: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance
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BF748
711062b
transistor bl 187
yl1 TRANSISTOR
f748
transistor ac 132
BF748
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BFG51
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.
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bb53l31
Q017b7i
BFG51
OT-103)
BFG90A.
BFG51
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transistor BC 247
Abstract: BC 247 b transistor
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445
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NTE74426
14-Lead
NTE74LS445
16-Lead
NTE74S474,
24-Lead
NTE74S475
4096-Bit
NTE74HC574,
20-Lead
transistor BC 247
BC 247 b transistor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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LbS3T31
LTE21025R
FO-41B)
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TRANSISTOR C 4460
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
Text: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature
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OT173
OT173X
BFP90A
OT173.
OT173X.
TRANSISTOR C 4460
RF NPN POWER TRANSISTOR C 10-12 GHZ
TRANSISTOR c 5578
SOT173
BFP90A
1702 NPN transistor
IN 5408 ZG
TRANSISTOR D 471
1346 transistor
c 3421 transistor
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Untitled
Abstract: No abstract text available
Text: l i i y * j i L M-Tjr iìr n i jim i - » j i m 140 Commerce Drive iW i§ Cwi\jS G rn t Tèi: Montgomeryviile, PA 18936-1013 w w » * * * 215 6 3 1-9 840 „ - . 4 O L Ì I m -. 1- UI 3 RF & MICROWAVE TRANSiSTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR
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108-152MHz
IVH35)
SD101S
SD1015
108152MHz
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Untitled
Abstract: No abstract text available
Text: Ordering num ber:EN 1970A f SA\YO | 2SC3751 W NO.1970A I1 f NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications J Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process
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2SC3751
00V/1
DD5D15Ã
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TOKO A 50 GTE
Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■
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NR421
150mV
800KHz
100f/V/M
280JUV/M
10KHz:
-28dB
15KHz
TOKO A 50 GTE
88-108 rf amplifier
TO82 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.
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SML30G60AN
SML30G600AN
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FR180
Abstract: BFR180
Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1296
OT-23
FR180
BFR180
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