TRANSISTOR ERA - 3 Search Results

146R

Abstract: CL146 T0-92B
Contextual Info: CL146 NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G EN ERA L DESCRIPTION T0-92B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment where small size is of paramount importance.

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: BCW29 PNP EPITAXIAL SILICON TRANSISTOR G EN ERA L PU RPO SE TRANSISTO R SOT-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature

Contextual Info: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: i., Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5945 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD FEATURES: 45"_s -, I C Era • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n

KT 805

Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Contextual Info: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which

bs170

Contextual Info: G en era l S e m i c o n d u c t o r _ BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0 . 1 8 1 (4 .6) 0 .1 4 2 (3 .6) Features_ • High input im pedance • High-speed switching • No m inority carrier storage tim e

Contextual Info: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n

2N7000

Abstract: 2N7000/2N7000
Contextual Info: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time

Contextual Info: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿ 5 SGS-THOMSON ¡m era « 7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STK12N 05L STK12N 06L V dss RDS on Id 50 V 60 V < 0.15 a < 0.15 a 12 A 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY

12v dc choke circuit

Abstract: 1 microhenry inductor Transistor ERA - 3 rf choke ADCH-80A Micro-Henries ADCH-80 ERA monolithic amplifier ERa series Mini-Circuits ERA-1SM
Contextual Info: Super Wide-band RF Choke Purpose of the Product Use of Heterojunction Bipolar Transistor technology has resulted in development of super wide-band monolithic microwave amplifiers such as Mini-Circuits ERA series. These amplifiers cover a bandwidth from DC to 8 GHz. They need biasing current injected at the RF output port.

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er

Contextual Info: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort

IQR fu 220 n

Contextual Info: PD - 91735 International löR R e ctifi 0 P IRG4RC10K PRELIMINARY Short Circuit Rated UitraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ho rt C ircu it Rated U itraFast: O ptim ized fo r high o p era ting fre q u e n cie s >5.0 kH z , and S ho rt C ircuit

BLU98

Abstract: pj 809 SOT-103 philips capacitor cross reference transistor SOT103 SOT103 L9 transistor
Contextual Info: N ARER P H I L I P S / D I S C R E T E bTE D • 1^53^31 DG2aaa3 47*î IAPX BLU98 U.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor designed fo r use in m o b ile radio tran sm itters in th e 9 0 0 M H z band. Features: • em itter-ballasting resistors fo r an o p tim u m te m p era tu re p ro file

germanium transistor pnp

Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Contextual Info: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e­

Contextual Info: ßrtkCOM w a n A M P com pany C\N Power Transistor, 14W 2.3 GHz PH2323-14 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ransistor C o m m o n Base C on figuration Class C O p era tio n Interdigitated G eo m etry G o ld M etalization System