TRANSISTOR EH 11 Search Results

ic 556

Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1- ° 2_ "

Contextual Info: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR

BCW66H

Abstract: BCW66F BCW66G
Contextual Info: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50

Contextual Info: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration

BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: EH Stanford Microdevices ISCA-13 Product Description Stanford M icrodevices’ SCA-13 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ mance up to 3 GHz. The heterojunction increases break­

Contextual Info: TOSHIBA 2SC4527 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r d i M T * j V 7 « Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • Transition Freauencv is Hi eh and Dependent. on Current

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

max7575

Abstract: BCW66F BCW66G BCW66H
Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

bcw66fr

Contextual Info: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68

Contextual Info: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)

BA6125

Abstract: ba612
Contextual Info: BA612 BA612 5 eh ^ 5-Channel Large-Current Driver B A 612«, * f ; l F 7 ' f A l C f 1 X M & f k t i Z $ - ' > h > h 7 > y ^ 5 ' 7 H ' 5 HISS A U T ' f 0 D IP 1 4 p in T A T t 'if o The BA612 is a monolithic IC consisting of an array of 5 Darlington configured transistor pairs which have built-in

CPM2C

Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
Contextual Info: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.

Contextual Info: Bulletin No. CM-F Drawing No. LP0100 Released 11/02 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion-controls.com CONVERTER MODULES ADAPTS MANY RED LION CONTROLS’ COUNTERS AND ACCESSORIES TO A WIDE RANGE OF SIGNAL SOURCES VCM - VOLTAGE CONVERTER MODULES

Contextual Info: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of

Contextual Info: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of

MG120V2YS40

Contextual Info: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

MG90V2YS40

Contextual Info: TO SHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE9602, NTE96L02, 16-Lead DI P, See Diag. 249 NTE96LS02, NTE96S02 Dual Retriggerable/Resettable Monostable Multivibrator cx 1 Q FIX 1 Q CD 1 Q 11EÉ log Q v cc 0 CX2 Q RX2 Q CD 2 Q1 Q g 11 g io a i n

TDA3654

Abstract: TDA3654Q TDA3654 equivalent TDA2579 vertical deflection and guard circuit metal detector coils
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3654 TDA3654Q Vertical deflection and guard circuit 110˚ Product specification File under Integrated Circuits, IC02 March 1991 Philips Semiconductors Product specification Vertical deflection and guard circuit (110˚) TDA3654

KRA221S

Abstract: KRA222S KRA223S KRA224S KRA225S KRA226S
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KRA221SKRA226S EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C