MG120V2YS40 Search Results

LC-2-G

Contextual Info: TECHNICAL DATA MG120V2YS40 High Power Switching Applications. Motor Control Applications. # # # # # The Electrodes are Isolated from Case. High Input Im pedance Includes a Com plete Half Bridge in O ne Package. Enhancem ent-M ode High Speed: t, = 1.5 is (M ax. (I, = 120 A)

diode bridge toshiba

Abstract: MG120V2YS40
Contextual Info: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: TOSHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 120V2YS40 HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG120V2YS40

Contextual Info: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

MG120V2YS40

Contextual Info: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

YS40

Contextual Info: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: TOSHIBA MG120V2YS40 TO SHIBA GTR MODULE SILICON N CH AN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO N S MOTOR CO N TRO L APPLICATION S • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228