TRANSISTOR E21 Search Results

IGT8D21

Abstract: IGT8E21
Contextual Info: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

IGT6D21

Abstract: IGT6E21
Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••

MJE1100 MOTOROLA

Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Contextual Info: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without

DTC113ZE

Abstract: transistor E21 DTA113ZCA DTC113Z DTC113ZCA DTC113ZKA DTC113ZSA DTC113ZUA
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA /DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without

DTC113ZE

Abstract: DTA113ZCA DTC113Z DTC113ZCA DTC113ZKA DTC113ZSA DTC113ZUA dta113
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA /DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without

2SC2217

Abstract: 2SC2367 NE21935 Ic 9148
Contextual Info: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up

TRANSISTOR BL 100

Abstract: DTC114YUA
Contextual Info: BL Galaxy Electrical Production specification Digital Transistor DTC R1≠R2 SERIES UA FEATURES Pb z Epitaxial planar die construction. z Complementary PNP types available(DTA). z Built-in biasing resistors,R1≠R2 z Also available in lead free version. Lead-free

Contextual Info: BL Galaxy Electrical Production specification Digital Transistor DTC R1≠R2 SERIES CA FEATURES Pb z Epitaxial planar die construction. z Complementary PNP types available(DTA). z Built-in biasing resistors,R1≠R2 z Also available in lead free version. Lead-free

ze 003 ic

Abstract: marking CODE ZUA SOT23 ZUA SOT23 ZCA TRANSISTOR transistor E21 MARKING ZE SOT-23 ze 003 ZCA transistor sot 23 sot-23 MARKING CODE ZCA 8k sot 23 marking
Contextual Info: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

chip die npn transistor

Contextual Info: WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.

transistor marking E39

Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.

Contextual Info: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.

transistor E21

Contextual Info: DTC113ZE/DTC113ZUA/DTC113ZCA DTC113ZKA/DTC113ZSA Digital Transistor NPN Features 1. 2. 3. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow

m453

Abstract: ELM452 K1 transistor elm453
Contextual Info: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C

marking CODE ZUA SOT23

Contextual Info: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin -film resistors with

2SC3474

Contextual Info: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)

Contextual Info: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C

Contextual Info: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Schematic ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C

Contextual Info: 8 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER EL045X EL050X series Features • High speed 1Mbit/s •15kV/1s minimum commone mode transient immunity at VCM= 1500V HCPL0453 • High isolation voltage between input and output (Viso=3750 Vrms ) • Guaranteed performance from 0°C to 70°C