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    TRANSISTOR D176 Search Results

    TRANSISTOR D176 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D176 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1769

    Abstract: nec k 1006 2SK4041 nec 1006 NEC PART NUMBER MARKING 2SK4
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4041 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4041 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)


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    PDF 2SK4041 2SK4041 4pXSLP04 D1769 nec k 1006 nec 1006 NEC PART NUMBER MARKING 2SK4

    d2493

    Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


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    PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852

    c4381

    Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
    Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


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    PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. c4381 D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494

    D2641

    Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


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    PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. D2641 c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300

    B1143

    Abstract: transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a
    Text: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features


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    PDF EN2063C 2SB1143/2SD1683 2SB1143 B1143 transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a

    B1143

    Abstract: TO126ML 2SB1143
    Text: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features


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    PDF 2SB1143/2SD1683 EN2063C 2SB1143 B1143 TO126ML 2SB1143

    2SB1140

    Abstract: 2069A
    Text: Ordering number:2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042A Features [2SB1140] · Adoption of FBET, MBIT processes.


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    PDF 2SB1140 2SB1140] O-126ML 2SB1140 2069A

    2SB1140

    Abstract: ITR09005
    Text: Ordering number:ENN2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042B Features [2SB1140] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5


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    PDF ENN2069A 2SB1140 2042B 2SB1140] O-126ML 2SB1140 ITR09005

    B1143

    Abstract: transistor D1683 2SD 1143 2SB1143S
    Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes


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    PDF EN2063C 2SB1143/2SD1683 O-126ML 2SB1143 B1143 transistor D1683 2SD 1143 2SB1143S

    D1768

    Abstract: transistor BC 336 BTD1768 80V 1A NPN Transistor TO-92 1902 transistor BC 390 Transistor c304a
    Text: CYStech Electronics Corp. Spec. No. : C304A3-B Issued Date : 2006.08.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose


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    PDF C304A3-B BTD1768BA3 BTD1768BA3 UL94V-0 D1768 transistor BC 336 BTD1768 80V 1A NPN Transistor TO-92 1902 transistor BC 390 Transistor c304a

    D1768

    Abstract: BTD1768A3 80V 1A NPN Transistor TO-92
    Text: CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose


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    PDF C304A3 BTD1768A3 BTD1768A3 UL94V-0 D1768 80V 1A NPN Transistor TO-92

    D1768

    Abstract: BTD1768A3 NPN transistor ECB TO-92 700 H2A
    Text: CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2006.11.30 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose


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    PDF C304A3 BTD1768A3 BTD1768A3 UL94V-0 D1768 NPN transistor ECB TO-92 700 H2A

    d1760

    Abstract: TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760
    Text: CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics


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    PDF C848J3 BTD1760J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760

    C4517

    Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
    Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668


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    PDF C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287

    2sk4041

    Abstract: D1769
    Text: データ・シート 接合形電界効果トランジスタ JUNCTION FIELD EFFECT TRANSISTOR 2SK4041 N チャネル接合形電界効果トランジスタ ECM インピーダンス変換用 外形図(単位:mm) 2SK4041 は,小型パッケージかつ高ゲインのため音響用や携


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    PDF 2SK4041 4pXLP04 D17693JJ1V0DS00 D17693JJ1V0DS 2sk4041 D1769

    triac zd 607

    Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
    Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes


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    PDF The32-246622 H1-O03EA0-0510020NM triac zd 607 transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


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    PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    c5287

    Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    PDF n66to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 c5287 c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852

    d1760

    Abstract: 821 transistor
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    PDF 2SD1760F5 SC-63) D1760 2SB1184 2SD1760F5 821 transistor

    TRANSISTOR d1760

    Abstract: 2SD1760F5
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    PDF 2SD1760F5 SC-63) D1760 2SB1184 TRANSISTOR d1760 2SD1760F5

    2SB1140

    Abstract: No abstract text available
    Text: O rde rin g n u m b e r: E N 2 0 6 9 A _ 2SB1140 PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications Applications • Strobes, power supplies, relay drivers, lamp drivers. Features . Adoption of FBET, MBIT processes. . Low saturation voltage.


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    PDF en2069a 2SB1140 2SB1140

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: E N 2069A 2SB1140 PN P Epitaxial P lanar Silicon Transistor S M IY O i 20V/5A Switching Applications A p p licatio n s • Strobes, power supplies, relay drivers, lamp drivers: F e a tu re s . Adoption of FBET, MBIT processes. . Low saturation voltage.


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    PDF 2SB1140 4017KI/D176TA 10/iA cH707

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


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    PDF 2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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