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ROHM Semiconductor 2SD1864TV2Q TRANS NPN 50V 3A ATV
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2SD1864 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1864	ROHM	Power Transistor (50V, 3A)	Original	PDF
2SD1864	ROHM	Power Transistor	Original	PDF
2SD1864	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1864	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1864	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1864	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1864	ROHM	Power Transistor (50V, 3A)	Scan	PDF
2SD1864	ROHM	Epitaxial Planar NPN Silicon Transistor, Medium Power Amplifier Apps	Scan	PDF
2SD1864	ROHM	Medium Power Amp. Epitaxial Planar NPN Silicon Transistor	Scan	PDF
2SD1864	ROHM	ATR, ATV Transistors	Scan	PDF
2SD1864	ROHM	ATR / ATV Transistors	Scan	PDF
2SD1864TV2P	ROHM	Power Transistor (50 V, 3 A)	Original	PDF
2SD1864TV2Q	ROHM	TRANS DRIVER NPN 50V 3A ATV	Original	PDF
2SD1864TV2Q	ROHM	Power Transistor (50 V, 3 A)	Original	PDF

2SD1864TV2R	ROHM	TRANS DRIVER NPN 50V 3A ATV	Original	PDF
2SD1864TV2R	ROHM	Power Transistor (50 V, 3 A)	Original	PDF

2SD1864 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1185 Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243 Text: Transistors Power Transistor 60V, 3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type	Original	PDF	2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243
2sb1184 Abstract: No abstract text available Text: 2SB1184 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	2SB1184 O-251/TO-252-2L O-251 2SD1760 2SD1864. O-252-2L 30MHz
2SD1760 Abstract: 2SB1184 2SB1243 2SD1864 Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter	Original	PDF	2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SB1184 2SB1243 2SD1864
2SD1760 Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243 Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor	Original	PDF	2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn
2SB1184 Abstract: 2SB1243 2SD1760 2SD1864 Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864	Original	PDF	2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
2SB1184 Abstract: 2SB1243 2SD1760 2SD1864 Text: Power Transistor 50V, 3A 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 1.5 2.5 9.5±0.5 0.5±0.1 0.65±0.1 0.75 2.5±0.2 6.8±0.2 2.3 +0.2 −0.1 4.4±0.2 C0.5 0.9 Structure	Original	PDF	2SD1760 2SD1864 65Max. 2SD1760 2SB1184 2SB1243. SC-63 R0039A 2SB1243 2SD1864
2SB1243 Abstract: 2SD1864 Text: Power Transistor 50V, 3A 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 Structure Epitaxial planar type	Original	PDF	2SD1864 2SB1243. 65Max. R1010A 2SB1243 2SD1864
transistor 2sb1184 Abstract: 2SB1184 2SD1760 2SD1864 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1184 TO-251 TO-252-2 TRANSISTOR PNP FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 123 1. BASE	Original	PDF	O-251/TO-252-2Plastic-Encapsulate 2SB1184 O-251 O-252-2 2SD1760 2SD1864. 30MHz transistor 2sb1184 2SB1184 2SD1864
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR PNP TO-252 FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	O-252 2SB1184 O-252 2SD1760 2SD1864. 30MHz
2SD1864 Abstract: No abstract text available Text: SPICE PARAMETER 2SD1864 by ROHM TR Div. * 2SD1864 NPN BJT model * Date: 2006/11/16 .MODEL 2SD1864 NPN + IS=1.2000E-12 + BF=91.918 + VAF=5.7704 + IKF=4.5333 + ISE=1.2000E-12 + NE=1.4873 + BR=344.81 + VAR=100 + IKR=81.827E-3 + ISC=1.4049E-9 + NC=1.6296 + RE=90.000E-3	Original	PDF	2SD1864 Q2SD1864 2000E-12 827E-3 4049E-9 000E-3 065E-3 04E-12 2SD1864
2SD1760 Abstract: 2SD1864 2SB1184 2SB1243 Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter	Original	PDF	2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SD1864 2SB1184 2SB1243
Untitled Abstract: No abstract text available Text: Power Transistor 60V, 3A 2SB1243 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1864. 2SB1243 2.5±0.2 0.65Max. 4.4±0.2 0.5±0.1 (1) (2) 14.5±0.5 Structure Epitaxial planar type	Original	PDF	2SB1243 2SD1864. 65Max. R1010A
2SB1184 Abstract: 2SB1243 2SD1760 2SD1864 Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864	Original	PDF	2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
EF 6802 P Abstract: 2sd1864 2SB1066M 2SB1243 2SD1507M 2SB1066 Text: ROHM CO L T D — 4DE J> • 70201^ h 7 > V X £ /Transistors 2SD1507M / 2SD1864 - 2SD1507M 1 a O U IO O H ODGSÖTB T B R H M - 7 : 27-2l - J L kfÇ à rV T Jl 78I^-^NPN y lJ = l > Power Amp.	OCR Scan	PDF	2SD1507M/2SD1864 2SD1507M 2SB1066M/2SB124313 2SB1066M, 2SB1243. 2SD1507M 2SD1864 EF 6802 P 2sd1864 2SB1066M 2SB1243 2SB1066

2SB1185 Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185 Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re	OCR Scan	PDF	2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
Untitled Abstract: No abstract text available Text: h ~p > y 7, $ /T ra n sisto rs 2SD1507M/2SD1864 2SD1507M NPN v U □ > h 7 > y / $ 4, ^ J i ilPiffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistors • W IJ ^ iiE l/D im e n s io n s U n it: mm 1) V ce ( sa t )= 0.5V (Typ ) t l & l ' o (at Ic / I b =2A /0.2A )	OCR Scan	PDF	2SD1507M/2SD1864 2SD1507M B1066M 1243t 2SB1066M, 2SB1243. 2SD1864
2SB1243 Abstract: 2SB1184 transistor 2SB1243 2SD1760 2SD1864 gd244 Text: 2SB1184 / 2SB1243 Transistors Power Transistor -60V, -3A 2SB1184/2SB1243 •Features •External dimensions (Units: mm) 1) LOW VcE(sat). VcEfsai) = -0.5V (Typ.) (Ic /Ib = -2A/-0.2A) 2) Complements the 2SD1760 /2SD1864. •Structure Epitaxial planar type	OCR Scan	PDF	2SB1184 2SB1243 2SB1184/2SB1243 2SD1760 2SD1864. 2SB1184 SC-63 65Max. 2SB1184) 2SB1243 transistor 2SB1243 2SD1864 gd244
2SD1762 Abstract: 230S d1760 D1864 Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type	OCR Scan	PDF	2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864
transistor B 1184 Abstract: 2SD1762 b 1185 Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type	OCR Scan	PDF	2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185
2SD1507 Abstract: E05A 2SD1507M 2SB1066M 2SB1243 2SD1864 Text: N ~7 > v Z-$ / I ransistors 2SD1507M O Q 2SD1507M/2SD1864 X b ° ^ = ir '> 77^ 7 0U n if t ß d “ 1 0 0 4 - ^ NPN v ' j 3 > h 7 > V ^ i ^ l l ^ ^ ' I Ï J l / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • £H f£^t5£EI/D im ensions Unit : mm	OCR Scan	PDF	2SD1507M/2SD1864 2SD1507M 2SD1864 2SB1066M/2SB12431 2SB1066M, 2SB1243 2SD1507M 2SD1864 2SD1507 E05A 2SB1066M 2SB1243
TRANSISTOR d1760 Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type	OCR Scan	PDF	2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g
2sb1243 TRANSISTOR Abstract: No abstract text available Text: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier	OCR Scan	PDF	2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR
1 w NPN EPITAXIAL PLANAR TYPE Abstract: 2SD1760 2SD1864 Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760/2SD1864 •Features •E xternal dimensions (Unite : mm) 1 ) LOW VcE(sal). 2SD1760 VcE(sai) = 0 .5 V (Typ.) 2SD1864 (I c/I b = 2 A / 0 . 2 A ) 2) Complements the 2SB1184 / 2SB1243. il •Structure	OCR Scan	PDF	2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864
2SD1864 Abstract: No abstract text available Text: 2SD1864 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sat) = 0.5 V at lc / l B = 2 A /0.2 A • c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 3	OCR Scan	PDF	2SD1864 2SD1864

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2SD1864 Price and Stock

ROHM Semiconductor 2SD1864TV2Q

ROHM Semiconductor 2SD1864

2SD1864 Datasheets (16)

2SD1864 Datasheets Context Search

2SB1185

2sb1184

2SD1760

2SD1760

2SB1184

2SB1184

2SB1243

transistor 2sb1184

Untitled

2SD1864

2SD1760

Untitled

2SB1184

EF 6802 P

2SB1185

Untitled

2SB1243

2SD1762

transistor B 1184

2SD1507

TRANSISTOR d1760

2sb1243 TRANSISTOR

1 w NPN EPITAXIAL PLANAR TYPE

2SD1864