TRANSISTOR D 716 VOLTAGE Search Results

Contextual Info: Click on Series name for product info on aimtec.com Series AMLDP-Z Up to 1000mA | LED Driver FEATURES: • • • • Models Single output Model Input Voltage V AMLDP-1630Z AMLDP-1635Z AMLDP-1650Z AMLDP-1660Z AMLDP-1670Z AMLDP-16100Z 7-16 7-16 7-16 7-16

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.

Contextual Info: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.

MAX715CWG

Abstract: MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 MAX716EVKIT TO-213
Contextual Info: 19-4507; Rev. 1 ;3 /9 2 / l/ l/ J X I/ l/ l B attery-P ow ered Supply System s G e n e ra l D e s c rip tio n F e a tu re s ♦ Four Logic-Controlled +5V Regulators The MAX716 com bines circuitry for four low-dropout linear

2N2222A zetex

Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Contextual Info: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0

Contextual Info: BSS64 _ J V HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended for high-voltage general purpose and switching

2TX749

Abstract: 2N2222A zetex MAX715CWG E4QN 10P05L
Contextual Info: 19-4507; Rev. 1;3/92 v V M X I / l / l B attery-P ow ered Supply System s The MAX716 com bines circuitry for four low-dropout linear regulators, three DC-DC switching regulators, and powersupervisory functions on a single IC. All but one regulator output is logic controlled so that loads may be shut down

Contextual Info: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Contextual Info: AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2802 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

transistor RJH 30

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750

1N06CLE

Abstract: zener diode 9CA transistor D 716
Contextual Info: a RLP1N06CLE h a r r is January 1994 Voltage-Clamping Current-Limited ESD-Protected N~Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 1A, 55V r DS O N . . 0.75Ì1 • 'L im it.

749 MOSFET TRANSISTOR motorola

Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

749 MOSFET TRANSISTOR motorola

Abstract: MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

transistor D 716

Abstract: S10007
Contextual Info: D iffused Junction S ilicon Type FEATURES • • • • V O LT A G E C U R R EN T C H A R A C T E R IS T IC S Universal standard, replacos many different part numbers. Diffused junction type In molded epoxy resin. N onpolarized. High reliability for com m unication use.

HA20

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage

BSS52

Abstract: BSS51 BSS50
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51 ; BSS52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2 base 3 collector, connected to case DESCRIPTION

MAX749CPA

Contextual Info: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digit a lly Adjust a ble LCD Bia s Supply _Applic a t ions Notebook Computers _Fe a t ure s ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:

ztx750 equivalent

Abstract: DAC IC 0808 749 MOSFET TRANSISTOR motorola SMD10P05L DAC ic 0808 pin diagram MAX749CPA dac IC 0808 circuit diagram MAX749 MAX749CSA MAX749EPA
Contextual Info: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digitally Adjustable LCD Bias Supply _Applications Notebook Computers _Features ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode