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AOC2800 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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AOC2800 | Alpha & Omega Semiconductor | Load Switch - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original |
AOC2800 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. |
Original |
AOC2800 AOC2800 716EF | |
Contextual Info: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. |
Original |
AOC2800 AOC2800 | |
Contextual Info: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. |
Original |
AOC2800 AOC2800 | |
AOC2800Contextual Info: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) |
Original |
AOC2800 AOC2800 |