TRANSISTOR D 1979 Search Results

TRANSISTOR D 1979 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 1979 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ10100 Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,	Original	PDF	AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
BF939 Abstract: 60S2 N322 transistor BF939 n3220 Text: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.	OCR Scan	PDF	BF939. 001E354 BF939 60S2 N322 transistor BF939 n3220
Untitled Abstract: No abstract text available Text: it_ N AUER PHILIPS/DISCRETE QbE D BF939 bb53T31 0012324 T • . ~ — - —— ' T - 2J - I 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled preamplifier in v.h.f.	OCR Scan	PDF	BF939 bb53T31 bbS3131 001232b bbS3T31 7Z82204
BD132 Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132 Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.	OCR Scan	PDF	BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Untitled Abstract: No abstract text available Text: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	PDF	2SD1005 2SD1005 2SB804
2SD1005 Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package	OCR Scan	PDF	2SD1005 2SB804 2SD1005 EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
transistor h44 Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32 Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)	OCR Scan	PDF	BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
BF967 Abstract: 60J2 Text: BF967, N AMER PHILIPS/DISCRETE ObE D • 1^53^31 0015356 b r-3iHC SiLICON PLANAR TRANSISTOR P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier in u.h.f. television tuners. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PDF	BF967. 001232a OT-37. 800MHz BF967 60J2
Untitled Abstract: No abstract text available Text: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision	OCR Scan	PDF	BF199 bbS3T31 BF199 00122b3
Untitled Abstract: No abstract text available Text: J _ N AMER PHILIPS/DISCRETE □ bE D BF979 bbSBTBl 00 E B 3 fl T t ^ - M - ist SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.	OCR Scan	PDF	BF979 BF979_ bb53131 7Z82222
bf199 Abstract: transistor NPN BF199 BF199 transistor TRANSISTOR JG 92 t-31-21 IEC134 Silicon Epitaxial Planar Transistor philips transistor BF199 Text: BF199 N AMER PHILIPS/DISCRETE OLE D • bbS3T31 OQISHbD T ■ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision i.f. amplifier.	OCR Scan	PDF	BF199 bbS3T31 BF199 00155L4 7Z21083 7Z21033 7Z0S59Ã transistor NPN BF199 BF199 transistor TRANSISTOR JG 92 t-31-21 IEC134 Silicon Epitaxial Planar Transistor philips transistor BF199
Untitled Abstract: No abstract text available Text: •I bb53t131 OOBS^flS 450 B A P X N AMER PHILIPS/DISCRETE PXTA 14 b?E D JV NPN SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring a high input impedance.	OCR Scan	PDF	bb53t OT-89)
Untitled Abstract: No abstract text available Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	PDF	BD131 OT-32 BD132. DD34243 BD132 003424b
Untitled Abstract: No abstract text available Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier	OCR Scan	PDF	BF967 b53T31 0Q1533E T-31-

d1694 Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base	OCR Scan	PDF	BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
TVP1000 Abstract: BF979 sot 37 Text: BF979 Jl H AMER P H I L I P S / D I S C R E T E ' DbE 5 • fabSS^l 0 0 1 5 335 T - 3 M Ì T SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.	OCR Scan	PDF	jafa53131 001S33Ã BF979 500Si OT-37. TVP1000 BF979 sot 37
Untitled Abstract: No abstract text available Text: DATA SHEET NEC / SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S D 1000 is designed fo r aud io frequency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FE A TU R E S • W orld Standard M in ia tu re Package	OCR Scan	PDF	2SD1000 2SD1000 2SB799
BD131 Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132 Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.	OCR Scan	PDF	BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
SIT Static Induction Transistor Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182 Text: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.	OCR Scan	PDF	2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
1GHz Oscillator Abstract: RCA 444 RCA microwave oscillator colpitts oscillator construction 547 relay ic rca transistor TA7943 colpitts oscillator rca409 100 watts transistor s-band Text: File IMo. 547 DUCB//D RF P o w er T ran sisto rs Solid State Division 40909 2-W, 2-GHz E m itte r-B a lla s te d Silicon N -P -N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: • Emitter-ballasting resistors ■ 2-W {min. output at 2 GHz	OCR Scan	PDF	H-1629 O-201AA RCA-40909* RCA-40909 1GHz Oscillator RCA 444 RCA microwave oscillator colpitts oscillator construction 547 relay ic rca transistor TA7943 colpitts oscillator rca409 100 watts transistor s-band
724 motorola NPN Transistor Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010 Text: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier	OCR Scan	PDF	MRF2010M/D MRF2010M MRF2010M/D 724 motorola NPN Transistor motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
H4042 Abstract: 5473B 2SB800 TC-5473B tc5473 Text: • D— S • S'— h NEC y 'J 3 > h- =7 Silicon Transistor 2SB800 PNPX 'J H > h # m O t mm, — T -i K 7 o 2S D 1001t 4 '* - y ■( , JT"'To 1 iffjDD’j'J ïL , r i i ] h F E 'C " 'i_ o 1.5 + 0.1 P t = 2.0 W ( 0.7 mmX 16 cm2-fe7 S -y VCeo > - 8 0 V, hFE = 200 TY P.(Ic = - 5 0 mA	OCR Scan	PDF	2SB800 2SD10011 OT-89) mmX16 H4042 5473B 2SB800 TC-5473B tc5473
OPTOCOUPLER tl 521 Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6 Text: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.	OCR Scan	PDF	TLP121 OPTOCOUPLER tl 521 P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6
741 as buffer amplifier Abstract: wein bridge oscillator high current fet amplifier schematic ICL8007 Monolithic Transistor Pair 741 opamp detector circuit using 741 OP-AMP wein bridge oscillator FET fet 741 wein bridge circuit Text: G E SOLID STATE DS T-1R -IS A005 D E \| 3fl7SDfll □ □E3t,S2 □ The IC L 8 0 0 7 — A High Perform ance FET — Inp u t Operational A m p lifier During the last 10 years the Field Effect Transistor has become the accepted device fo r amplifying low level	OCR Scan	PDF	023LS2 ICL8007 ICL8007, AN-30, IH5009 10-79-00B 741 as buffer amplifier wein bridge oscillator high current fet amplifier schematic Monolithic Transistor Pair 741 opamp detector circuit using 741 OP-AMP wein bridge oscillator FET fet 741 wein bridge circuit

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TRANSISTOR D 1979 Search Results

TRANSISTOR D 1979 Result Highlights (5)

TRANSISTOR D 1979 Datasheets Context Search

MJ10100

BF939

Untitled

BD132

Untitled

2SD1005

transistor h44

BF967

Untitled

Untitled

bf199

Untitled

Untitled

Untitled

d1694

TVP1000

Untitled

BD131

SIT Static Induction Transistor

1GHz Oscillator

724 motorola NPN Transistor

H4042

OPTOCOUPLER tl 521

741 as buffer amplifier