TRANSISTOR CR PNP Search Results

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc

Q62702-D1070

Abstract: TRANSISTOR D 1785 BD430
Contextual Info: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

Contextual Info: PLESSEY S E N I CO ND /D IS CR ET E 7220533 PLESSEY "t S dT | 7 5 H Q S 3 B G005GÛ5 1 95D 05085 SEM ICO ND/DI SCRETE 7 PNP silicon planar high voltage transistor ~ D 31-21 BF493SP FEATURES • 3 5 0 V V CE0 • Low leakage currents DESCRIPTION This transistor is designed specifically for use

MPS2907 toshiba

Contextual Info: M5E D • ID TT ES D DOIVBSR H IT0S4 TOSHIBA TRANSISTOR MPS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS T 2 cr< TOSHIBA (DISCRETE/OPTO) FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY. FEATURES : . High DC Current Gain Specified : -0.1

process 65

Abstract: MMBT3640 PN3640 PN4258
Contextual Info: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S

2SA1042

Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
Contextual Info: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching

BT8032

Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803
Contextual Info: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor

TRIAC BCR 16 km

Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Contextual Info: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)

BT8040N

Abstract: Melody Generator BT8032 BT8040 MO chip Transistor
Contextual Info: TECHNICAL DATA BT8040N Melody Generator with Accompaniment FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor

transistor tt 2206

Abstract: TT 2206 transistor LT1817 transistor LT5817
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high

transistor h 1061

Contextual Info: ROHM CO 4ÜE LTD T Ä S B 'm D QOQbBST h 7 > y 7 $ / T ransistors 7 FM Y3 y z 2 7 - 2 ,7 • 1 *1 ■ W -f K v ri/ty ln v e rte r Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor • [S/Dimensions Unit: mm 2 D HUH • F e atu re 1) A su p e r-m in im o id p a c k a g e h ouses 2

BB313

Abstract: WO2 transistor MSA035 BCP69 WO-2
Contextual Info: • bbS3T31 QGEMS30 flee * A P X N AMER PH ILI PS/ DI SC RE TE B CP69 b?E ]> A_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0

2N5685

Abstract: 2N5685 MOTOROLA 2n5684 MOTOROLA 2N5686 2N5686 amplifier 2N5686
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5684 High-Current Com plem entary Silicon Power TVansistors NPN 2N5685 . . . designed for use In high-power amplifier and switching circuit applications. • • • 2N 5686* High Current Capability — lc Continuous = 50 Amperes.

Contextual Info: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )

2N5583

Abstract: MRF558
Contextual Info: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and

TP5000

Contextual Info: DTA143TSA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in SPT (SC-72) package DTA143TSA (SPT) a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film

transistor

Abstract: MJE15031 CHIP TRANSISTOR CP645 ny transistor transistor cr
Contextual Info: PROCESS CP645 Central Power Transistor TM Semiconductor Corp. PNP, 8.0A Power Transistor Chip PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS

transistor CR pnp

Abstract: CJD42C Transistor switch CP611 TIP42C chip die transistor
Contextual Info: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS Top Side Metalization Al - 50,000Å

CP608

Abstract: TIP32C CJD32C
Contextual Info: PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 66 X 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 X 24 MILS Emitter Bonding Pad Area 11 X 14 MILS Top Side Metalization Al - 50,000Å

Contextual Info: PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å