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    MMBT3640 Price and Stock

    onsemi MMBT3640

    TRANS PNP 12V 0.2A SOT23-3
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    DigiKey MMBT3640 Cut Tape
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    MMBT3640 Digi-Reel 1
    • 1 $0.76
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    MMBT3640 Reel
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    Newark MMBT3640 Cut Tape 3,000
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    onsemi MMBT3640LT1

    12 V, 80 MA 12 V SWITCHING BIPOL
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    onsemi MMBT3640_D87Z

    TRANS PNP 12V 0.2A SOT23-3
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    DigiKey MMBT3640_D87Z Reel 10,000
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    Motorola Semiconductor Products MMBT3640LT1

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    Bristol Electronics MMBT3640LT1 27,596 45
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    Quest Components MMBT3640LT1 2,645
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    MMBT3640LT1 476
    • 1 $0.15
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    MMBT3640LT1 79
    • 1 $0.343
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    Fairchild Semiconductor Corporation MMBT3640

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    Bristol Electronics MMBT3640 2,786
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    ComSIT USA MMBT3640 2,495
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    Find more MMBT3640 price and stock on Findchips.com

    MMBT3640 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT3640 Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP SW 12V SOT-23 Original PDF
    MMBT3640 Fairchild Semiconductor PNP Switching Transistor Original PDF
    MMBT3640 Fairchild Semiconductor PNP Switching Transistor Original PDF
    MMBT3640 National Semiconductor Bipolar Transistor, PNP Switching Transistor, SOT-23 Original PDF
    MMBT3640 Fairchild Semiconductor PNP Switching Transistor Scan PDF
    MMBT3640 Motorola European Master Selection Guide 1986 Scan PDF
    MMBT3640 Motorola PNP silicon switcing transistor. Scan PDF
    MMBT3640 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MMBT3640 National Semiconductor Surface Mount Transistors Scan PDF
    MMBT3640 National Semiconductor High Speed Saturated Switching Transistors Scan PDF
    MMBT3640_D87Z Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS SW PNP 12V 200MA SOT-23 Original PDF
    MMBT3640_D87Z Fairchild Semiconductor PNP Switching Transistor Original PDF
    MMBT3640LT1 Leshan Radio Company Switching Transistor(PNP Silicon) Original PDF
    MMBT3640LT1 Motorola SWITCHING TRANSISTOR Original PDF
    MMBT3640LT1 On Semiconductor Switching Transistor Original PDF
    MMBT3640LT1 On Semiconductor Switching Transistor Original PDF
    MMBT3640LT1-D On Semiconductor Switching Transistor PNP Silicon Original PDF
    MMBT3640_NL Fairchild Semiconductor PNP Switching Transistor Original PDF

    MMBT3640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3640LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit


    Original     		PDF MMBT3640LT1 r14525 MMBT3640LT1/D MMBT3640LT1

    Untitled

    Abstract: No abstract text available
    Text: SMD High Speed Saturated Switching Transistors toff @ IC Part No. MMBT3640 20070515 Polarity PNP VCEO ton Min. Max. Max. IC V (ns) (ns) (mA) 12 25 35 50 hFE @ IC Min. 30 SMD Bipolar Transistors VCE(sat) @ IC & IB IC Max IC (mA) (V) (mA) 10 0.2 10 IB fT Min.


    Original     		PDF MMBT3640

    Untitled

    Abstract: No abstract text available
    Text: SHD431002 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 646, REV. A PNP SWITCHING TRANSISTOR SHD431002S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to MMBT3640 • Surface Mount Package Absolute Maximum Ratings*


    Original     		PDF SHD431002 SHD431002S S-100 MMBT3640

    MMBT3640LT1

    Abstract: mmbt3640l
    Text: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit


    Original     		PDF MMBT3640LT1 236AB) r14525 MMBT3640LT1/D MMBT3640LT1 mmbt3640l

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Collector Current — Continuous


    Original     		PDF MMBT3640LT1 236AB)

    MMBT3640LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT3640LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT3640LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12


    Original     		PDF MMBT3640LT1/D MMBT3640LT1 MMBT3640LT1/D* MMBT3640LT1

    MMBT3640

    Abstract: PN3640 CBVK741B019 F63TNR PN2222N PN4258
    Text: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3640 MMBT3640 PN3640 OT-23 PN4258 MMBT3640 CBVK741B019 F63TNR PN2222N

    MMBT3640LT1

    Abstract: MMBT3640L
    Text: LESHAN RADIO COMPANY, LTD. Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –12 Vdc Collector–Base Voltage V CBO –12 Vdc Emitter–Base Voltage


    Original     		PDF MMBT3640LT1 236AB) MMBT3640LT1 MMBT3640L

    PN3640

    Abstract: MMBT3640 PN4258
    Text: N PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3640 MMBT3640 OT-23 PN4258 PN3640 MMBT3640

    Untitled

    Abstract: No abstract text available
    Text: Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –12 Vdc Collector–Base Voltage V CBO –12 Vdc Emitter–Base Voltage V –4.0 Vdc –80 mAdc Collector Current — Continuous


    Original     		PDF MMBT3640LT1 236AB)

    PN3640

    Abstract: MMBT3640 PN4258
    Text: PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF PN3640 MMBT3640 OT-23 PN4258 PN3640 MMBT3640

    Untitled

    Abstract: No abstract text available
    Text: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3640 MMBT3640 PN3640 OT-23 PN4258

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT3640LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO


    Original     		PDF MMBT3640LT1 236AB)

    PN3640

    Abstract: No abstract text available
    Text: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3640 MMBT3640 PN3640 OT-23 PN4258

    H R C M F 2J 225

    Abstract: No abstract text available
    Text: / D iscrete POWER & S ign al Technologies S E M IC O N D U C T O R • PN3640 MMBT3640 SOT-23 B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 m A. S ourced from Process 65. S e e


    OCR Scan     		PDF PN3640 MMBT3640 PN3640 OT-23 H R C M F 2J 225

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Rating Symbol Value Unit C o lle cior-E m itter Voltage VCEO -1 2 Vdc Collector-Base Voltage VCBO • 12 Vdc v EBO -4 .0 Vdc 'c -8 0 m Adc Em itter-Base Voltage C ollector C urrent — C ontinuous MMBT3640LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB


    OCR Scan     		PDF MMBT3640LT1* OT-23 O-236AB)

    process 65

    Abstract: MMBT3640 PN3640 PN4258
    Text: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S


    OCR Scan     		PDF PN3640 MMBT3640 OT-23 PN4258 process 65 MMBT3640 PN3640

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT3640LT1 PNP Silicon Motorola Preferred Device M AXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO -1 2 Vdc C ollector-B ase Voltage VCBO -1 2 Vdc E m itte r- Base Voltage


    OCR Scan     		PDF MMBT3640 OT-23 O-236AB) BT3640LT1 b3b7255

    TRANSISTOR C 557 B

    Abstract: MMBT3640 PN3640 PN4258
    Text: S e m i c o n d u c t o r ' “ PN3640 MMBT3640 PN3640 / MMBT3640 & Discrete POW ER & Signal Technologies National SOT-23 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. S e e


    OCR Scan     		PDF PN3640 MMBT3640 OT-23 PN4258 VBE10fl, 00M0bS2 TRANSISTOR C 557 B MMBT3640 PN3640

    MMBT5571-2

    Abstract: No abstract text available
    Text: This Surface Mount Devices NATL Surface Mount Transistors Typo No. Case Style VcES* Ices* VCE SAT VCEO Vebo hFE lc & VCE VcBO 'CBOg Vcb (V) (V) (V) (nA) (V) Min Max (mA) (V) (V) Min Min Max Min Max TO-236 (49) 6 6 4 50* 3 30 20 Its MMBT3640 TO-236 (49)


    OCR Scan     		PDF bS01130 003713b T-37-OÃ MMBT5571-2

    Untitled

    Abstract: No abstract text available
    Text: js s i w n c i i N O . . . r r r a r ? PN3640 MMBT3640 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings


    OCR Scan     		PDF PN3640 MMBT3640 PN4258 PN3640

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO -1 2 Vdc Collector-Base Voltage VCBO -1 2 Vdc Em itter-Base V o ltage v EBO - 4.0 Vdc ic -8 0 m A dc Rating C o lle cto r C u rrent — C o ntinuous MMBT3640LT1* CASE 318-07, STYLE 6


    OCR Scan     		PDF MMBT3640LT1* OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itch in g Transistor MMBT3640LT1 PNP Silicon Motorola Preferred Device M AXIM U M R ATING S Rating Symbol Value Unit Collector-Emitter Voltage VCEO -1 2 Vdc C ollecto r-B ase Voltage v CBO -1 2 Vdc Em itter-Base Voltage


    OCR Scan     		PDF O-236AB)

    PN3640

    Abstract: No abstract text available
    Text: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e


    OCR Scan     		PDF PN3640 MMBT3640 PN3640 OT-23