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    TRANSISTOR CR Search Results

    TRANSISTOR CR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU806..807

    Abstract: BU806 BU807
    Text: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110°° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


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    PDF BU806/807 O-220 BU806 BU807 BU806..807 BU806 BU807

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    Abstract: No abstract text available
    Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    PDF BU406 BU406 O-220 QW-R203-021

    Untitled

    Abstract: No abstract text available
    Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    PDF BU406 BU406 O-220 QW-R203-021

    Untitled

    Abstract: No abstract text available
    Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    PDF BU406 BU406 O-220 500mA 500mA, QW-R203-021

    npn switching transistor Ic 5A

    Abstract: monochrome tv receiver npn transistor 400V BU406
    Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    PDF BU406 BU406 O-220 500mA, QW-R203-021 npn switching transistor Ic 5A monochrome tv receiver npn transistor 400V

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


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    PDF 20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging

    BU406L

    Abstract: BU406 transistor BU406 DBU406 BU406L TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR „ DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.


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    PDF BU406 BU406 BU406L BU406-x-TA3-T BU406L-x-TA3-T BU406-x-TF3-T BU406L-x-TF3-T BU406-x-T3P-T BU406L-x-T3P-T O-220 BU406L transistor BU406 DBU406 BU406L TO-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR  DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110°C CRT.


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    PDF BU406 BU406 BU406L-x-TA3-T BU406G-x-TA3-T BU406L-x-TF1-T BU406G-x-TF1-T BU406L-x-TF3-T BU406G-x-TF3-T BU406L-x-T3P-T BU406G-x-T3P-T

    2N6191

    Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
    Text: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE


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    PDF MJE1320 220AB r14525 MJE1320/D 2N6191 2N5337 IC 7403 AM503 MJE1320 MR856 P6302

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR „ DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110°C CRT.


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    PDF BU406 BU406 BU406L-x-TA3-T BU406G-x-TA3-T BU406L-x-TF1-T BU406G-x-TF1-T BU406L-x-TF3-T BU406G-x-TF3-T BU406L-x-T3P-T BU406G-x-T3P-T

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    PDF DTA143EE 416/SC

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    PDF DTA114YE 416/SC 6aa marking

    Untitled

    Abstract: No abstract text available
    Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


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    PDF BD239C BD240C. O-220

    transistor sc 308

    Abstract: DTA143EE SMD310
    Text: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BC450

    Abstract: 5v power transistor
    Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage


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    PDF BC450 BC450 300mA 625mW 100mA 100MII; 300/iS, 5v power transistor

    Untitled

    Abstract: No abstract text available
    Text: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


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    PDF BU806/807 BU806 BU807 BU806

    bu806 equivalent

    Abstract: transistor s07 using of damper in Horizontal Output Transistor bu807 equivalent BU806 "Darlington Transistor" damper diode darlington npn BU806..807 transistor bu806 BU807
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED -UP Diode Between Base and Em itter ABSOLUTE MAXIMUM RATINGS


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    PDF BU806/807 BU806 BU807 BU806 300ns, bu806 equivalent transistor s07 using of damper in Horizontal Output Transistor bu807 equivalent "Darlington Transistor" damper diode darlington npn BU806..807 transistor bu806 BU807

    bu806 equivalent

    Abstract: bu806
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


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    PDF BU806/807 O-220 BU806 BU807 300nS, bu806 equivalent bu806

    4 channel triac opto

    Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
    Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector


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    PDF

    BC450

    Abstract: No abstract text available
    Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


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    PDF BC450 BC450 300mA 625mW 300/iS, 100mA Nov-97

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    PDF BU806/807 O-220 BU806 BU807 00201bS

    Transistor lm 358

    Abstract: lm 358 ic BC449
    Text: CRO DESCRIPTION BC449 NPN SILICON TRANSISTOR 0 4 .6 8 T O -92 F 0 .1 8 [ BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 3.58 (0.14) (0 . 18 ) r~


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    PDF BC449 BC449 300mA 625mW 100mA Transistor lm 358 lm 358 ic

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling


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    PDF O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax: