TRANSISTOR CB 170 Search Results

CSD2470

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO

CSD2470

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage

Contextual Info: KSC2233 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 200V • C ollector C urrent D.C : lc = 4A • C ollecto r D issipation: P c = 40W ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating

BCY79

Abstract: bcy 78 bcy 79
Contextual Info: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages

transistor BC204

Abstract: 2SA984F
Contextual Info: TO-92 R«stlc Package Transistor» PNP Electrical Characteristics (Ta=25"C. U n le ss Otherwise Specified) Maxim um Ratings Type No. 2SA719 H.E10 '' i 'J : V EBO (V) Min (V) Min (V) Min 30 25 5 PD (W) w @Tc=25cc 0.625 0.5 c:BO V cb ' ces ^CE (pA) Max (V)

G40N60

Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
Contextual Info: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

RCA1E02

Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Contextual Info: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«

transistor bc 577

Abstract: BF680 S 170 TRANSISTOR BF 272 transistor BF272 BC 577 transistor transistor h21e transistor BC 56 BF316 J BF680
Contextual Info: PNP silicon transistors, H F am plification Transistors PNP au silicium , am plification HF v CEO V Case / h 21E v CEsat (V ) fT / / | C/ I B (MHz) tS (ns) TSi 76 B oîtie r pt o t (mW) VCER* Typa v CEXo h2 1 E * m in * B F 272 A TO 72 170 -4 0 20 -3 850

S82L-1024

Abstract: 1402C transistor International Rectifier 13005 S82L-0305 S82L-0624 S82L-1524
Contextual Info: Switching Power Supply S82L Highly Reliable and Full-functioned 15-year Life Expectancy 5, 12, 15, or 24 V output voltages, and 30, 60, 100, or 150 W power ratings. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection

S82D-6024

Abstract: omron fan speed control relay unit S82D S82D-3005 S82D-3012 S82D-3024
Contextual Info:
Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications
Wide range of output voltages: 5 V, 12 V, or 24 V
Selectable 85 to 132 VAC or 170 to 264 VAC input voltage
Equipped with overvoltage and overload protection, remote sensing and remote

1402C transistor

Abstract: S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c
Contextual Info: Switching Power Supply S82D Powerful Yet Compact 300 W or 600 W Power Supplies 5 V, 12 V, or 24 V output voltages available. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection and remote sensing and control functions.

Contextual Info:
Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications
Wide range of output voltages: 5 V, 12 V, or 24 V
Selectable 85 to 132 VAC or 170 to 264 VAC input voltage
Equipped with overvoltage and overload protection, remote sensing and remote

S82L-1524

Abstract: S82L-1024 S82L-1005 S82L-0624
Contextual Info:
Switching Power Supply S82L Highly Reliable Power Supply Offers 15-Year Service Life
Model ranges from 30 to 150 W with 5, 12, 15, or 24 V output voltages
85 to 132 VAC or 170 to 264 VAC selectable input voltage
Equipped with overvoltage and overload

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K T A 1704 EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER FEATURES • Complementary to KTC2803. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: m 2N3417 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE T O -92 /T O -98 _ .205 |5 201 .1 7 5 4 451 OIA. i MAXIMUM RATINGS .210 |5 33 170 (4 32)

TRANSISTOR 2n697

Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Contextual Info: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems

2N697

Abstract: RCA-2N697 rca transistor TRANSISTOR 2n697 RCA Solid State Power Transistor
Contextual Info: E SOLID STATE 38 7 5 08 1 G E S O L I D S T A T E "Öl ÖF|3ö7SDfll 00170Ô4 3 jf" o 1 e 17084 D T-yr-fy High-Speed Power Transistors_ File Number 2N697 Silicon N-P-N Planar Transistor 16 TERMINAL DESIGNATIONS For High-Speed Switching Service in Electronic Data-Processing Systems

transistor c830

Contextual Info: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.

BU2725DX

Abstract: transistor bu2725dx
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

Contextual Info: Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications D D D D D D D D Wide range of output voltages: 5 V or 12 V. Selectable 85 to 132 VAC or 170 to 264 VAC input voltage. Equipped with overvoltage and overload protection,