CSD2470
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage
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ISO/TS16949
CSD2470
C-120
CSD2470Rev080402E
CSD2470
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO
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Original
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QSC/L-000019
CSD2470
C-120
CSD2470Rev080402E
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CSD2470
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage
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Original
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CSD2470
C-120
CSD2470Rev080402E
CSD2470
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 15 UNITS V Collector Emitter Voltage
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Original
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CSD2470
C-120
CSD2470Rev080402E
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PDF
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RCA1E02
Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Text: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«
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10Wma:
2N3440«
2N406440390"
2N3439*
2N406340385AUDIO
RCA1A15
RCA1A09
RCA1A11
RCA1E02
40327
205MD
2N406
RCA 40313
40318 RCA
rca+40412
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PDF
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S82L-1024
Abstract: 1402C transistor International Rectifier 13005 S82L-0305 S82L-0624 S82L-1524
Text: Switching Power Supply S82L Highly Reliable and Full-functioned 15-year Life Expectancy 5, 12, 15, or 24 V output voltages, and 30, 60, 100, or 150 W power ratings. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection
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15-year
S82L-0315
S82L-0324
S82L-0605
S82L-0612
S82L-0615
S82L-0624
S82L-1005
T07-E1-2
S82L-1024
1402C transistor
International Rectifier 13005
S82L-0305
S82L-0624
S82L-1524
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PDF
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S82D-6024
Abstract: omron fan speed control relay unit S82D S82D-3005 S82D-3012 S82D-3024
Text: Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications Wide range of output voltages: 5 V, 12 V, or 24 V Selectable 85 to 132 VAC or 170 to 264 VAC input voltage Equipped with overvoltage and overload protection, remote sensing and remote
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S82D-3005formation
S82Y-D60T
1-800-55-OMRON
S82D-6024
omron fan speed control relay unit
S82D
S82D-3005
S82D-3012
S82D-3024
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1402C transistor
Abstract: S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c
Text: Switching Power Supply S82D Powerful Yet Compact 300 W or 600 W Power Supplies 5 V, 12 V, or 24 V output voltages available. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection and remote sensing and control functions.
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100/200VAC
S82D-3005
S82D-ster
T08-E1-2
1402C transistor
S82D-6024
S82D-3024
S82D
S82D-3005
S82D-3012
fan and lights remote
60jj
transistor 1402c
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PDF
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Untitled
Abstract: No abstract text available
Text: Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications Wide range of output voltages: 5 V, 12 V, or 24 V Selectable 85 to 132 VAC or 170 to 264 VAC input voltage Equipped with overvoltage and overload protection, remote sensing and remote
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120/240VAC
S82Y-D60T
1-800-55-OMRON
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PDF
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Untitled
Abstract: No abstract text available
Text: Switching Power Supply S82L Highly Reliable Power Supply Offers 15-Year Service Life Model ranges from 30 to 150 W with 5, 12, 15, or 24 V output voltages 85 to 132 VAC or 170 to 264 VAC selectable input voltage Equipped with overvoltage and overload
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Original
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15-Year
S82L-0312
S82L-0315
S82L-0324
S82L-0605
S82L-ndling
1-800-55-OMRON
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PDF
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S82L-1524
Abstract: S82L-1024 S82L-1005 S82L-0624
Text: Switching Power Supply S82L Highly Reliable Power Supply Offers 15-Year Service Life Model ranges from 30 to 150 W with 5, 12, 15, or 24 V output voltages 85 to 132 VAC or 170 to 264 VAC selectable input voltage Equipped with overvoltage and overload
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Original
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15-Year
S82L-0312
S82L-0315
S82L-0324
S82L-0605
S82L-0612
1-800-55-OMRON
S82L-1524
S82L-1024
S82L-1005
S82L-0624
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PDF
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Untitled
Abstract: No abstract text available
Text: Switching Power Supply S82D High-Grade Power Supply for Demanding Industrial Applications D D D D D D D D Wide range of output voltages: 5 V or 12 V. Selectable 85 to 132 VAC or 170 to 264 VAC input voltage. Equipped with overvoltage and overload protection,
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Untitled
Abstract: No abstract text available
Text: KSC2233 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 200V • C ollector C urrent D.C : lc = 4A • C ollecto r D issipation: P c = 40W ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating
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KSC2233
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PDF
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BCY79
Abstract: bcy 78 bcy 79
Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages
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i-10mA
990i2,
BCY79
bcy 78
bcy 79
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G40N60
Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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HGTG40N60B3
G40N60B3
1-800-4-HARRIS
G40N60
g40n60b3
g40n60b
g40n60b3 igbt
40N60B3
TA49052
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PDF
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transistor bc 577
Abstract: BF680 S 170 TRANSISTOR BF 272 transistor BF272 BC 577 transistor transistor h21e transistor BC 56 BF316 J BF680
Text: PNP silicon transistors, H F am plification Transistors PNP au silicium , am plification HF v CEO V Case / h 21E v CEsat (V ) fT / / | C/ I B (MHz) tS (ns) TSi 76 B oîtie r pt o t (mW) VCER* Typa v CEXo h2 1 E * m in * B F 272 A TO 72 170 -4 0 20 -3 850
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BF680
I-21E*
transistor bc 577
S 170 TRANSISTOR
BF 272 transistor
BF272
BC 577 transistor
transistor h21e
transistor BC 56
BF316
J BF680
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K T A 1704 EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER FEATURES • Complementary to KTC2803. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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OCR Scan
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KTC2803.
Cycled50%
KTA1704
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PDF
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Untitled
Abstract: No abstract text available
Text: m 2N3417 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE T O -92 /T O -98 _ .205 |5 201 .1 7 5 4 451 OIA. i MAXIMUM RATINGS .210 |5 33 170 (4 32)
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2N3417
2N3417
406x0
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PDF
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TRANSISTOR 2n697
Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Text: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems
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2N697
QQ170A4
O-205AD
RCA-2N697
30011s,
TRANSISTOR 2n697
2N697
Transistor Data chart
QQ170
25C06
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PDF
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2N697
Abstract: RCA-2N697 rca transistor TRANSISTOR 2n697 RCA Solid State Power Transistor
Text: E SOLID STATE 38 7 5 08 1 G E S O L I D S T A T E "Öl ÖF|3ö7SDfll 00170Ô4 3 jf" o 1 e 17084 D T-yr-fy High-Speed Power Transistors_ File Number 2N697 Silicon N-P-N Planar Transistor 16 TERMINAL DESIGNATIONS For High-Speed Switching Service in Electronic Data-Processing Systems
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2N697
TQ-205AD
RCA-2N697
2N697
rca transistor
TRANSISTOR 2n697
RCA Solid State Power Transistor
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PDF
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transistor c830
Abstract: No abstract text available
Text: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS
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O-205AD
transistor c830
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PDF
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Untitled
Abstract: No abstract text available
Text: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available
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OCR Scan
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2N2222A
MIL-S-19500
2N2222A
f-100MHz
100kHz
150mA,
300ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
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BU2722AX
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PDF
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BU2725DX
Abstract: transistor bu2725dx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
1E-04
1S-02
BU2725DX
transistor bu2725dx
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