GP500
Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.
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ACY33
ACY33
--Y33
Q60103
GP500
bnsu
germanium af transistors
Germanium Transistor
transistor ACY PNP
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
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transistor bc 541
Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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OOQ405Ö
Q60106-X139
135H--
AF139
transistor bc 541
TRANSISTOR BC 534 PNP
transistor Siemens 14 S S 92
AF139
TRANSISTOR BC 534
Germanium power
Germanium mesa
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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RF Transistor BF198
Abstract: BF198 transistor bf 198 1AM transistor compatible transistor 1am
Text: BF198 NPN Silicon Planar Transistor designed for RF applications; low feedback capacitance, especially suited for AGC in emitter-grounded IF stages in TV sets. to" 2.5 -*K6* r max. Q50 Plastic case = JEDEC TO-92 TO-18 compatible The case is impervious to light
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BF198
RF Transistor BF198
BF198
transistor bf 198
1AM transistor compatible
transistor 1am
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fast diodes 400 v
Abstract: BUT232V BUT23
Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUT232V
fast diodes 400 v
BUT232V
BUT23
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BUT23
Abstract: No abstract text available
Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUT232V
BUT23
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Transistor BFX 59
Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher
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Q60206-X
Transistor BFX 59
BFX59F
BFX59
kbr 1000
transistor BFX59
transistor w 04 59
Transistor BFX 4
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2SB1282
Abstract: ITO-220 TP4J10 transistor TC-10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 TP4J10 Unit : mm 4A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1282
ITO-220
TP4J10)
Resista282
-40mA
2SB1282
ITO-220
TP4J10
transistor TC-10
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22a ic
Abstract: 2SB1448 TP15J10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P TP15J10 Unit : mm -15A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1448
TP15J10)
22a ic
2SB1448
TP15J10
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2sB1283
Abstract: ITO-220 TP7J10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 TP7J10 Unit : mm A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1283
ITO-220
TP7J10)
005IC
-70mA
200mm
2sB1283
ITO-220
TP7J10
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2SD1791
Abstract: ITO-220 TP7L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case : ITO-220 TP7L10 Unit : mm 7A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1791
ITO-220
TP7L10)
002IC
004IC
2SD1791
ITO-220
TP7L10
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P TP15J10 Unit : mm -15A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1448
TP15J10)
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PDF
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2SD1795
Abstract: ITO-220 TP10K40
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1795
ITO-220
TP10K40)
2SD1795
ITO-220
TP10K40
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2Sd1788
Abstract: ITO-220 TP4L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm 4A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1788
ITO-220
TP4L10)
100mm
150mm
2Sd1788
ITO-220
TP4L10
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2SD1788
Abstract: ITO-220 TP4L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm 4A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1788
ITO-220
TP4L10)
100mm
150mm
2SD1788
ITO-220
TP4L10
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PDF
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2SD1793
Abstract: ITO-220 TP10L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1793
ITO-220
TP10L10)
002IC
004IC
2SD1793
ITO-220
TP10L10
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PDF
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ITO-220
Abstract: TP4L20 2SD1789 AX12M
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1789
ITO-220
TP4L20)
ITO-220
TP4L20
2SD1789
AX12M
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PDF
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2SD1795
Abstract: ITO-220 TP10K40 7105A
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1795
ITO-220
TP10K40)
2SD1795
ITO-220
TP10K40
7105A
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PDF
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2SD1793
Abstract: ITO-220 TP10L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1793
ITO-220
TP10L10)
002IC
004IC
2SD1793
ITO-220
TP10L10
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PDF
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0033a
Abstract: 22a ic 2SD2196 TP15L20
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD2196 Case : ITO-3P TP15L20 Unit : mm 15A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD2196
TP15L20)
002IC
0033a
22a ic
2SD2196
TP15L20
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PDF
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2SD1792
Abstract: ITO-220 TP7L20
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1792 Case : ITO-220 TP7L20 Unit : mm 7A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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Original
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2SD1792
ITO-220
TP7L20)
002IC
004IC
2SD1792
ITO-220
TP7L20
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PDF
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2SB1284
Abstract: soa 01 ITO-220 TP10J10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case : ITO-220 TP10J10 Unit : mm A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1284
ITO-220
TP10J10)
005IC
2SB1284
soa 01
ITO-220
TP10J10
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PDF
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transistor TC-10
Abstract: 2SD1789 ic ax 1 TP4L20 ITO-220 TC 100 ax
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1789
ITO-220
TP4L20)
transistor TC-10
2SD1789
ic ax 1
TP4L20
ITO-220
TC 100 ax
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