TRANSISTOR C8 Search Results

TRANSISTOR C8 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR C8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
TP3400 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output	OCR Scan	TP3400 TP3400	PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
BLV91 Abstract: ferroxcube 1988 mda406 MDA401 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in	Original	BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
BY206 Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430	PDF
capacitor 2200 uF Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a	Original	BLT82 OT96-1 MAM227 capacitor 2200 uF philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6	PDF
BY206 Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor	PDF
BTN2129T3 Abstract: 06102 d 772 transistor Text: CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed	Original	C853T3 BTN2129T3 BTN2129T3 O-126 R2120 UL94V-0 06102 d 772 transistor	PDF
IC 4047 Abstract: data sheet of IC 4047 IC 4047 BE ic 4047 datasheet BTN2129E3 Text: CYStech Electronics Corp. Spec. No. : C853E3 Issued Date : 2004.06.15 Revised Date : 2004.07.14 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129E3 Description The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed	Original	C853E3 BTN2129E3 BTN2129E3 O-220AB R2120 UL94V-0 IC 4047 data sheet of IC 4047 IC 4047 BE ic 4047 datasheet	PDF
MDA337 Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope	Original	BLU60/12 OT-119 MDA337 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3	PDF
BFG97 Abstract: BFG31 TRANSISTOR BFg97 sc7313 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223	Original	BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 BFG97 BFG31 TRANSISTOR BFg97 sc7313	PDF
bfg97 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223	Original	BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97	PDF
transistor rf m 1104 Abstract: UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile	Original	BLU97 OT122A) transistor rf m 1104 UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97	PDF

BLX94C Abstract: MBH100 BLX94 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended	Original	BLX94C OT122A OT122A BLX94C MBH100 BLX94	PDF
thickness of microstripline Abstract: BFG31 BFG97 MBB773 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor	Original	BFG97 OT223 BFG31. MSB002 OT223. thickness of microstripline BFG31 BFG97 MBB773	PDF
1902 transistor Abstract: BTN2129A3 Text: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed	Original	C853A3 BTN2129A3 BTN2129A3 R2120 UL94V-0 1902 transistor	PDF
122d transistor Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector	PDF
MDA342 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope	Original	BLU45/12 OT-119 MDA342	PDF
318M Abstract: No abstract text available Text: SEC TENTATIVE SPECIFICATION SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1162 V443 HIGH VOLTAGE HIGH CURRENT SW ITCHING NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r transistor ignitor and m otor driver applications.	OCR Scan	2SD1162 318M	PDF
Philips 4312 020 Abstract: blv75 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLV75/12 OT-119) Philips 4312 020 blv75	PDF
mda324 Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327	PDF
BLW98 Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW98 BLW98 blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended	Original	BFG198 OT223 MSB002 OT223. R77/03/pp14	PDF

TRANSISTOR C8 Search Results

TRANSISTOR C8 Result Highlights (5)

TRANSISTOR C8 Datasheets Context Search

oz960

TP3400

germanium transistors PNP

BLV91

la 4440 amplifier circuit diagram 300 watt

BY206

capacitor 2200 uF

BY206

BTN2129T3

IC 4047

MDA337

BFG97

bfg97

transistor rf m 1104

BLX94C

thickness of microstripline

1902 transistor

122d transistor

MDA342

318M

Philips 4312 020

mda324

BLW98

Untitled