TRANSISTOR C42 Search Results

222259116641

Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4

c39 transistor

Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Philips 2222-581

Abstract: BLV950 St 1702 TRANSISTOR ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching,

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR19180EF

Abstract: JESD22-A114 Z111A
Contextual Info: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

J307 FET

Abstract: J307 transistor c35 equivalent IM335
Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

BLF6G13L

Abstract: UT-141C-25-TP
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

UT-141C-25-TP

Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

C42C2

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE

C43C2

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE

C42C2

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

C43C2

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer C42C2 TO-126 SOT-32 Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer C43C2 TO-126 SOT-32 Plastic Package C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

c4381

Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

D2641

Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

C4517

Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
Contextual Info: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668

Contextual Info: C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0 .49 | 0 .7 5 C 4.5 TYP. L 15.7 TYP. M

Contextual Info: It C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2 .25 TYP. E F 0 .49 | 0 .75 G 4.5 TYP. L 15.7 TYP.

4D4 TRANSISTOR

Abstract: C42C2
Contextual Info: C42C2 C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 10.8 B 10.5 C 2.4 2.7 D 0 .7 0.9 E F 2.25 TYP. 0 .49 | 0 .7 5 C 4.5 TYP. L 15.7 TYP. M

capacitor 106 35K

Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET