TRANSISTOR C307 Search Results

marking 2L PNP SOT-89

Abstract: BTC3906M3 BTA1514M3
Contextual Info: Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description • The BTA1514M3 is designed for general purpose application requiring high breakdown voltage.

BTC3906N3

Abstract: BTA1514N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2002.06.11 Revised Date : 2002.12.04 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose applications requiring high breakdown

BTA1514N3

Abstract: BTC3906N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage.

TRANSISTOR n5401 b

Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
Contextual Info: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A

BTN5551N3

Abstract: BTP5401N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A

BTA1579S3

Abstract: BTC4102S3
Contextual Info: Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V

Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

c3075

Abstract: 2SC3075 toshiba c3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

toshiba c3075

Abstract: C3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

C3076

Abstract: 2SA1241 2SC3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor c3076

Abstract: C3076 2SA1241 2SC3076 024 marking code
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

c3076

Abstract: 2SA1241 2SC3076 transistor c3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)

transistor c3076

Abstract: C3076 2SA1241 2SC3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

transistor c3076

Abstract: C3076 2SC3076 2SA1241
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

2SC3076

Abstract: C3076 2SA1241
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

c3074

Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

c3074

Abstract: Equivalent 2SC3074 2SA1244 2SC3074
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244

C3075

Abstract: 2SC3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

C3075

Abstract: 2SC3075 C307
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max) · High collector breakdown voltage: VCEO = 400 V

Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244