TRANSISTOR C 413 Search Results

Contextual Info: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: S AM S UN G S E M I C O N D U C T O R . INC MMBT5089 IME D | Q0Q757T 5 £ NPN EPITAXIAL SILICON TRANSISTOR T - ¿ q . | q LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

tlc 1451

Abstract: TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5
Contextual Info: AjûKim m an AM P company Radar Pulsed Power Transistor, 20W, IOOjis Pulse, 10% Duty PH2931-20M 2.9 - 3.1 GHz V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Contextual Info: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D | 7*^4142 0 0 0 7 a tt» 7 | NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

SAMSUNG transistor

Contextual Info: SAMSUNG S E M IC O N D U C T O R INC MMBTA70 14E D | 000731U 5 | PNP EPITAXIAL SILICON TRANSISTOR f AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T*=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Contextual Info: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

Contextual Info: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

marking symbol ER transistor

Abstract: "marking h" sc-62
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC5212 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2 S C 5 2 1 2 is a resin seated silicon N P N epitaxial type transistor. It designed with high collector current and small VcE sat).

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: <Q £> C-MOS NJ 2-OUTPUT POSITIVE VOLTAGE The NJU7204 series is a 2-output C-MOS positive voltage regulator which contains dual system of internal accurate voltage reference, error amplifier, control transistor output voltage setting resistor and strobe circuit.

RZ3135B40W

Abstract: T3A3
Contextual Info: N AMER PH IL IPS/DI SCRE TE ObE D bbSBTBl 001S2tj7 S RZ3135B40W J PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended fo r use In a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

Contextual Info: N AMER PHILIPS/DISCRETE bbSBTBl 0 0 1 S 2 tj7 5 RZ3135B40W DbE D T -33 "/3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3.1 to 3.5 GHz.

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

2SC4836

Contextual Info: Ordering number: EN4134 No.4134 _ 2 S C 4 8 3 6 NPN Epitaxial Planar Silicon Transistor 20V/5A Switch Applications A pplications •Strobes, power supplies, relay drivers, lamp drivers. F eatu re s • Large allowable collector dissipation. ■Low saturation voltage.

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

220v 2a transistor

Abstract: smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching
Contextual Info: f Z 7 S 5 ^7# C S - T H O M [ L t K S g T M O N K S S G S F 6 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G 'S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS ■ 50kHz SW ITCHING SPEED