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    TRANSISTOR C 2570 Search Results

    TRANSISTOR C 2570 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2570 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MHQ6100

    Abstract: IC AL 6001
    Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON


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    MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001 PDF

    MPS3906

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value C ollector-E m itter Voltage VCEO ^0 Vdc C ollector-B ase Voltage VCBO -4 0 Vdc E m itter-B ase Voltage U nit Ve b o


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    MPS3906 MPS3906 PDF

    2SA1050A

    Abstract: 2SC1946A 2SA985A 2832A 2834A 2831A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    lTc-25X! 2SA1050A 2SC1946A 2SA985A 2832A 2834A 2831A PDF

    2S92

    Abstract: KC510 2S146 transistor 2N219 2N219 2S125 ge 142 2N218 2NJ8 HJ23D
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    2S191 2s192 2S92 KC510 2S146 transistor 2N219 2N219 2S125 ge 142 2N218 2NJ8 HJ23D PDF

    NS 8002 1151

    Abstract: TO-66 CASE
    Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications


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    MIL-S-19500/379 O-116) NS 8002 1151 TO-66 CASE PDF

    high power fet audio amplifier schematic

    Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd
    Text: LXE1711-100 EVALUATION BOARD USER GUIDE LXE1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.3, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    LXE1711-100 high power fet audio amplifier schematic 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd PDF

    12 volt audio amplifier class D schematic

    Abstract: high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin
    Text: LXE1711-100 EVALUATION BOARD USER GUIDE Not Recommended For New Design LX1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright 2000 Rev. 0.4, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    LXE1711-100 LX1711-100 12 volt audio amplifier class D schematic high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin PDF

    panasonic fc

    Abstract: ELECTROLYTIC CAPACITOR 330uF 63V ERJ-3EKF2204V SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A transistor k31 fairchild TP45-TP47 FDS6898A LX1675 MBR0530 TP20
    Text: LX1675 EVAL KIT USER GUIDE LX1675 STANDARD EVALUATION KIT USER GUIDE LX1675 3 PWM DC-DC Buck Converters and Single LDO Controller Copyright 2002 Rev. 1.0a, 2006-02-24 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    LX1675 ERJ-3EKF3571V ERJ-3EKF1691V ERJ-3EKF1181V ERJ-3GET0R00V ERJ-3EKF1003V ERJ-3EKF6652V panasonic fc ELECTROLYTIC CAPACITOR 330uF 63V ERJ-3EKF2204V SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A transistor k31 fairchild TP45-TP47 FDS6898A MBR0530 TP20 PDF

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    Abstract: No abstract text available
    Text: LX1675 EVAL KIT USER GUIDE LX1675 STANDARD EVALUATION KIT USER GUIDE LX1675 3 PWM DC-DC Buck Converters and Single LDO Controller Copyright 2002 Rev. 1.0a, 2006-02-24 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    LX1675 ERJ-3EKF3571V ERJ-3EKF1691V ERJ-3EKF1181V ERJ-3GET0R00V ERJ-3EKF1003V ERJ-3EKF6652V PDF

    4w 9733

    Abstract: ECJ1VB1C104K 3V wireless keyboard circuit board led lcd inverter schematic Notebook lcd inverter schematic power supply of LCD TV backlight schematic SOT363 flash LX1972 LX1995 LX1995-1CSE
    Text: LX1972-1995 EVAL KIT USER GUIDE PDA SMART PHONE LED POWER MANAGEMENT EVALUATION BOARD LX1972 & LX1995 TM Copyright 2004 Rev. 1.0a, 2005-01-27 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    LX1972-1995 LX1972 LX1995 MCRO3EZPJ104 MCRO3EZPF15R0 MCRO3EZPJ5761 MCRO3EZPJ103 MCRO3EZPJ4422 MCRO3EZPF1912 4w 9733 ECJ1VB1C104K 3V wireless keyboard circuit board led lcd inverter schematic Notebook lcd inverter schematic power supply of LCD TV backlight schematic SOT363 flash LX1972 LX1995 LX1995-1CSE PDF

    0v to 12v variable regulated power supply

    Abstract: 1.25V Adjustable Shunt Regulator MAX1982 MAX1982EUT MAX1982EVKIT MAX1983 MAX1983EUT ABEA
    Text: 19-2570; Rev 0; 8/02 MAX1982 Evaluation Kit The MAX1982 evaluation kit EV kit provides a regulated 1.2V output voltage while operating on input voltages from 1.25V to 5.5V. It delivers a 0.3A output current from a 1.25V to 2.5V input, with less than 300mV


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    MAX1982 300mV 727mW. MAX1983 MAX1982/MAX1983 0v to 12v variable regulated power supply 1.25V Adjustable Shunt Regulator MAX1982EUT MAX1982EVKIT MAX1983 MAX1983EUT ABEA PDF

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent PDF

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 PDF

    Untitled

    Abstract: No abstract text available
    Text: LX1800 EVALUATION BOARD USER GUIDE TM Copyright 2002 Rev. 1.0, 2006-09-12 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1800 EVALUATION BOARD USER GUIDE INTRODUCING TO PRODUCT The LX1800 Evaluation Board is available from Microsemi for evaluating the functionality and performance of the


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    LX1800 LX1800 ERJ-6ENF5620V ERJ-6ENF1001V ERJ-6ENF2001V ERJ-6ENF3011V ERJ-6ENF4991V ERJ-6ENF1002V PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


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    te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    b0349

    Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
    Text: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage


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    00QTM31 BF870SBF872S T0126 15A3DIN b0349 BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    16N40E

    Abstract: high power pulse generator with mosfet mosfet 16n 15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate


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    PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    AN569

    Abstract: MTW16N40E
    Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW16N40E Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM


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    MTW16N40E/D O-247 MTW16N40E MTW16N40E/D* TransistorMTW16N40E/D AN569 MTW16N40E PDF

    hatfield attenuator

    Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM PDF

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    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 16N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS


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    MTW16N40E/D 16N40E 340K-01 PDF