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    TRANSISTOR BU 226 Search Results

    TRANSISTOR BU 226 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU 226 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    walkie talkie circuit diagram

    Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
    Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206


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    5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 PDF

    XS2M12PA370L1

    Abstract: Telemecanique XSC-h203629 walkie talkie circuit diagram XS8E1A1PAL01M12 XS630B XS612B xsc-h207629 Telemecanique XS2m XS4P18AB120 telemecanique xs4
    Text: Proximity Sensors Catalog September File 9006 07 CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Auto-Adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . 180 Auto-Adaptable and Standard Tubular Inductive Proximity Sensor . . . . 184


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    Infor30FB260A XS3P30MB230A XS3P30FB260K XS3P30MB230K XS4P12FA260 XS4P12MA230 XS4P12FA260K XS4P12MA230K XS4P12FB260 XS4P12MB230 XS2M12PA370L1 Telemecanique XSC-h203629 walkie talkie circuit diagram XS8E1A1PAL01M12 XS630B XS612B xsc-h207629 Telemecanique XS2m XS4P18AB120 telemecanique xs4 PDF

    E223770

    Abstract: hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000
    Text: Table of Contents Introduction and Technical Information .3-7 DC-3


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    Wire-Standard5UN024-Q65 AIS30N15UP024-2M AIS30N15UP024-Q65 K1F90VA K2F90V5 K2F90V5R KF90C53N KF90C53NR KF90C53P KF90C53PR E223770 hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000 PDF

    AD7311

    Abstract: ADSP-2187 AD73311 AD73322 AD7854L ADSP-2189M analog devices transistor tutorials adsp 218x user manual ADSP-2189 218x boot example
    Text: 10 HARDWARE INTERFACING AND EXAMPLES Figure 10-0. Table 10-0. Listing 10-0. Overview This chapter contains two major sections: Interfacing to DSP Processors and Interfacing Examples. The Interfacing to DSP Processors section provides detailed information about interfacing ADSP-218x family processors to


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    ADSP-218x ADSP-2100 M68300 CPU32 CPU32RM/AD) MC68F333 AD7311 ADSP-2187 AD73311 AD73322 AD7854L ADSP-2189M analog devices transistor tutorials adsp 218x user manual ADSP-2189 218x boot example PDF

    BU326s

    Abstract: No abstract text available
    Text: S G S - T H O M S ON D7E » I J 1 2 i 2 3 7 Ü Q 1 7 Q 7 B ^ 1^ 67C 1^9 7 5 D 33 ^ J-Ì BU326S MULTIEPITAXIAL MESA NPN HIGH VO LTAGE POW ER SW ITCH The BU 3 2 6 S is a silicon multiepitaxiai N P N transistor in Jedec TO-3 metal case, par­ ticularly intended for sw itch-m ode C T V applications.


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    BU326S DG17G7S 001707b BU326s PDF

    VEB mikroelektronik

    Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
    Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP


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    57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    BU226

    Abstract: transistor bu 226 w 4b 139 NPN transistor TO-3
    Text: Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendung: H orizontal-Ablenk-Endstufen in Schwarz-W eiß-Fernsehgeräten Application: H orizontal d e flection circu its in b la ck and white TV-receivers Besondere Merkmale:


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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES


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    M57774 M57774 225MHz, PDF

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING PIN : Pin VCC1 ®VCC2 ©PO ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted


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    M57774 220-225MHZ, Parame90 PDF

    pt100 LAPP

    Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751
    Text: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES


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    XTR105 k/XTR105. 4-20mA 30nAp-p 110dBmin 14-PIN SO-14 Pt100 pt100 LAPP IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751 PDF

    C4027

    Abstract: SC 2262 2SD4027 2sc4027-applied 2SA1552 2SC4027 500mAIB
    Text: SANYO S E M I C O N D U C T O R CORP S2E D i m 07b O D 0 7 0 bQ 1 2SA1552, 2SC4027 T ' 33' ì l T-33'01 P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2262B Applications . Converters, inverters, color TV audio output


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    GQ070b0 2SA1552, 2SC4027 2SA1552/2SC4027-applied 2SA1552 C4027 SC 2262 2SD4027 2sc4027-applied 500mAIB PDF

    k446

    Abstract: transistor k446 BUK446 BUK446-1000A BUK446-1000B
    Text: P H IL IP S INTERNATIONAL Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    711DflEb K446-10OOA/B -SOT186 BUK446 -1000A -1000B k446 transistor k446 BUK446-1000A BUK446-1000B PDF

    Untitled

    Abstract: No abstract text available
    Text: l4 3 D 5 5 7 1 0DS3fin TT4 • HAS BUZ351 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C • 11.5 A, 400V T O P VIE W • rDS on) = 0 .4 fl • SOA is Power-Dissipation Limited SO URCE D R A IN


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    BUZ351 BUZ351 00S3S22 PDF

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


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    Untitled

    Abstract: No abstract text available
    Text: BUZ76A {£ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 2.6A, 400V TOP VIEW • rDS on) = 2 .5 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics


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    BUZ76A BUZ76A 92GS-44236 PDF

    ED38 diode

    Abstract: 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan
    Text: intei I n t e l C orp ora tion, 1977 APPLICATION NOTE AP-27 P R IC E $1.GG Related Intel Publications "UPI-41 User's M anual” The material in this A p p l i c a ti o n Note is f o r in fo r m a t io n a l purposes on ly and is subject t o change w i t h o u t notice. lntel C o rp o ra ti o n has made an e f f o r t to ve rify t h a t the mate­


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    AP-27 UPI-41TM S-10380 CH-8021 ED38 diode 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT25G102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT2 5 G 102 U nit in mm STROBE FLASH APPLICATIONS • • • • H igh Input Impedance Low Saturation Voltage : VQ E say = 8V (Max. (Ic = 150A) Enhancement-Mode 12V Gate Drive


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    GT25G102 2-10S1C PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TMP47C452B CMOS 4-BIT MICROCONTROLLER TMP47C452BN TMP47C452BF The 47C452B is a high perform ance 4-bit single chip microcomputer based on theTLC S-47 CMOS series. And th e 47C452B has a built-in large-capacity RAM fo r repertory dial and DTMF generator, which is suitable for


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    TMP47C452B TMP47C452BN TMP47C452BF 47C452B SDIP42-P-600-1 TMP47P452VN PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    ECG transistor replacement guide book free

    Abstract: Burr-Brown Application Note AN-165 philips ecg replacement guide DC-DC Converter Burr-Brown 700 tl2272 BB IS0107 Tubes Catalog SDM857KG transistor manual substitution ecg book FREE DOWN design a 60hz notch filter
    Text: BURR-BROWN APPLICATIONS HANDBOOK B U R R - BROW N l B B < B u rr-B ro w n 1C A p p l i c a t i o n s H andbook LI-459 1994 Burr-Brown Corporation Printed in USA Burr-Brown Corporation International Airport Industrial Park Mailing Address: PO Box 11400


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    LI-459 ECG transistor replacement guide book free Burr-Brown Application Note AN-165 philips ecg replacement guide DC-DC Converter Burr-Brown 700 tl2272 BB IS0107 Tubes Catalog SDM857KG transistor manual substitution ecg book FREE DOWN design a 60hz notch filter PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF