TRANSISTOR BU 206 Search Results

TRANSISTOR BU 206 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BU 206 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
walkie talkie circuit diagram Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206	Original	5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12	PDF
BUK442-100A Abstract: BUK442-100B Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.	OCR Scan	K442-1OOA/B EUK442 -100A OT186 BUK442-100A BUK442-100B	PDF
BUZ74A Abstract: T0220AB BUZ-74A Text: PowerMOS transistor N AMER PHILIPS/DISCR ETE BU Z74A ObE D ^53^31 0014S14 2 I May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,	OCR Scan	BUZ74A t-39-11 Lb53131 0D14520 T-39-1I BUZ74A T0220AB BUZ-74A	PDF
transistor bc 237c Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206 Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers	OCR Scan	IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206	PDF
TRANSISTOR BDX Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP BUX37 CB-159) BUV54 CB-19 TRANSISTOR BDX transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208	PDF
transistor buv 90 Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide	OCR Scan	O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C	PDF
transistor Amp 3055 Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@	OCR Scan	625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
8 pin ic 3773 Abstract: No abstract text available Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442	OCR Scan	E3B33c 000DQ5M lo-32 8 pin ic 3773	PDF
TRANSISTOR 2067 Abstract: No abstract text available Text: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)	OCR Scan	FC110 T-35-H 22kfl, FC110 2SC3396, TRANSISTOR 2067	PDF
IC TA 31101 Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the	OCR Scan	00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor	PDF
transistor BUX 48 Abstract: transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking Text: TELEFUNKEN ELECTRONIC ôHEOD'ib 000=1507 4 m k L G G 17E D BUX 48 • BUX 48 A inflLIMMI ! electronic CrMiiv«'fchno>og*» • Silicon NPN Power Transistors T " 3 3 " /S ' Applications: Switching mode power supply, inverters, motor control and relay driver	OCR Scan	15A3DIN E--07 transistor BUX 48 transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors	OCR Scan	RN1201 RN1201, RN1202, RN1203, RN1205, RN1206 RN2201 RN1202 RN1203	PDF
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan		PDF

RCA 40636 transistor Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327 Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.	OCR Scan	ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327	PDF
RCA 40313 Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 Text: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.	OCR Scan	ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220	PDF
4311 mosfet transistor Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072 Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.	OCR Scan	2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072	PDF
pa 2030a Abstract: 25CC 2SA1622 FC103 2018Al IC 7443 Text: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e	OCR Scan	FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443	PDF
500 DKZ Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt	OCR Scan	150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN3282 r No.3282 ^_ F C 1 2 8 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features • On-chip bias resistance (R1 = 10k£l) • Composite type with 2 transistors contained in the CP package currently in use, improving the	OCR Scan	EN3282 FC128 2SC3859,	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN3206 _ F C 1 3 2 No.3286 NPN Epitaxial Planar Silicon Composite Transistor Sw itching Applications with Bias Resistance F e a tu re s • On-chip bias resistances (R1 = lOkii, R2 = 47kC2) • Composite type with 2 transistors contained in the CP package currently in use, improving the	OCR Scan	EN3206 47kC2) FC132 2SC4047,	PDF
2SC4645 Abstract: 2SA1785 Text: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)	OCR Scan	EN3511A 2SA1785/2SC4645 2SA1785 2SC4645	PDF
RCA 40411 transistor Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254 Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.	OCR Scan	ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40411 transistor rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254	PDF
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan		PDF

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TRANSISTOR BU 206 Search Results

TRANSISTOR BU 206 Result Highlights (5)

TRANSISTOR BU 206 Datasheets Context Search

walkie talkie circuit diagram

BUK442-100A

BUZ74A

transistor bc 237c

TRANSISTOR BDX

transistor buv 90

transistor Amp 3055

bc 540

8 pin ic 3773

TRANSISTOR 2067

IC TA 31101

transistor BUX 48

Untitled

transistor kt 326

RCA 40636 transistor

RCA 40313

4311 mosfet transistor

pa 2030a

500 DKZ

Untitled

Untitled

2SC4645

RCA 40411 transistor

HBF4727A