TRANSISTOR BSW68 Search Results

TRANSISTOR BSW68 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BSW68 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
BSW68 Abstract: AG TRANSISTOR BUY49S CP349 chip die npn transistor Text: PROCESS CP349 Power Transistor NPN- High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 51 x 51 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 15.7 MILS Emitter Bonding Pad Area 7.9 x 15.7 MILS Top Side Metalization Al - 30,000Å	Original	CP349 BUY49S BSW68 BSW68 AG TRANSISTOR BUY49S CP349 chip die npn transistor	PDF
BSW68 Abstract: BUY49S CP268 Text: PROCESS CP268 Central Power Transistor TM Semiconductor Corp. NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 63 x 63 MILS Die Thickness 10 MILS Base Bonding Pad Area 9 x 12 MILS Emitter Bonding Pad Area 10 x 18 MILS Top Side Metalization	Original	CP268 BUY49S BSW68 BSW68 BUY49S CP268	PDF
BSW68 Abstract: Transistor BSW68 LE17 transistor 2a 20v 5w Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC	Original	BSW68 O-205AD) BSW68 Transistor BSW68 LE17 transistor 2a 20v 5w	PDF
Untitled Abstract: No abstract text available Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC	Original	BSW68 O-205AD)	PDF
BSW68 Abstract: No abstract text available Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC	Original	BSW68 O-205AD) BSW68	PDF
BSW68 Abstract: No abstract text available Text: BSW68 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 150V • VCEO = 150V	Original	BSW68 O-205AD) BSW68	PDF
BSW68A Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification	Original	BSW68A BSW68A	PDF
BSW68 Abstract: No abstract text available Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 150.0 V NO. BSW68 Voltage, Collector to Emitter (VCE) 150.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 6.0 V empty empty Collector Current (IC) 2.0 A empty empty A CASE TO-39 5.0 W	Original	BSW68 BSW68	PDF
BSW67 Abstract: BSW68 LG 631 IC transistor bsw67 Text: Data Sheet cen tral BSW67 BSW68 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSW67, BSW68 types are Silicon NPN Epitaxial Planar Transistors designed	OCR Scan	BSW67, BSW68 BSW67 BSW68 100mA 500mA BSW67 LG 631 IC transistor bsw67	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF

993 395 pnp npn Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10	Original	BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q	PDF
BSW66A Abstract: bsw67a BSW63A bsw68a Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification	OCR Scan	BSW66A; BSW67A; BSW68A BSW66A BSW67A BSW68e BSW63A bsw68a	PDF
BSW68A Abstract: BSW67A BSW66A Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification	OCR Scan	BSW66A; BSW67A; BSW68A MAM317 BSW66A BSW67A BSW68A BSW67A BSW66A	PDF
BSW68A 1990 Abstract: bsw68a Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO	OCR Scan	BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a	PDF
BY206 Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a Text: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A	OCR Scan	BSW66A BSW67A BSW68A 500mA BAV10 BY206 7Z776S1 77655 BSW68A 68A diode BY206 diode 82S2 Silicon Epitaxial Planar Transistor philips k 68a	PDF
BY206 Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter	OCR Scan	BSW66A 711002b DD4237Ã BSW67A BSW68A 711Qa2b Q0M53B5 BY206 k 68a Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
Zener Diode 3v 400mW Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –	Original	DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
data sheet BSW67A Abstract: BSW67A BP317 BSW66A BSW68A Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors	Original	M3D111 BSW66A; BSW67A; BSW68A MAM317 SCA54 117047/00/02/pp8 data sheet BSW67A BSW67A BP317 BSW66A BSW68A	PDF

TRANSISTOR BSW68 Search Results

TRANSISTOR BSW68 Result Highlights (5)

TRANSISTOR BSW68 Datasheets Context Search

y51 h 120c

sx3704

BUV48I

BSW68

BSW68

BSW68

Untitled

BSW68

BSW68

BSW68A

BSW68

BSW67

ksd 302 250v, 10a

3TE445

993 395 pnp npn

BSW66A

BSW68A

BSW68A 1990

BY206

BY206

Q2N4401

Zener Diode 3v 400mW

BGY41

data sheet BSW67A