inductive proximity sensor
Abstract: IA 05
Text: Proximity Sensors Inductive High Temperature Types IA, M5, 8, NPN/PNP • Stainless steel housings • Sensing distance: 0.8 - 1 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN or PNP, make switching • For flush mounting • 2 m silicone cable
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0A4B
Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
DS00529E-page
0A4B
keypad 4x4 7 segment display
4x4 matrix keypad membrane
4x4 matrix keypad and microcontroller
4X4 HEX KEY PAD
keypad membrane 4X4
LTC3710G
hex keypad
4x4 hex keypad
7 segment display 4x4 keyboard
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EPC1001
Abstract: EPC Gan transistor MARKING 1001
Text: EPC1001 DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS – 100 V RDS ON – 7 m1 ID – 25 A EFFICIENT POWER CONVERSION Preliminary information subject to change without notice Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the
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EPC1001
EPC1001
EPC Gan transistor
MARKING 1001
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4X4 HEX KEY PAD
Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
4X4 HEX KEY PAD
keypad membrane 4X4
4x4 hex keypad with microcontroller
4x4 hex keypad
hex keypad
4-DIGIT 7-SEGMENT LED DISPLAY
AN529
LTC3710G
061c
065B
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IA 05
Abstract: No abstract text available
Text: Proximity Sensors Inductive High Temperature Types IA, DC, M5, M8 • • • • • • Stainless steel housings Sensing distance: 0.8 - 1 mm Power supply: 10 to 30 VDC Output: Transistor NPN or PNP, make switching For flush mounting 2 m silicone cable Product Description
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transistor 257A
Abstract: No abstract text available
Text: Proximity Sensors Inductive High Temperature Types IA, DC, M5, M8 • • • • • • Stainless steel housings Sensing distance: 0.8 - 1 mm Power supply: 10 to 30 VDC Output: Transistor NPN or PNP, make switching For flush mounting 2 m silicone cable Product Description
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4x4 matrix keypad in pic with c code
Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
D-81739
4x4 matrix keypad in pic with c code
108 046f
keypad 4x4 c code for dspic
4X4 HEX KEY PAD
keypad membrane 4X4
big 4-digit seven segment led display pic
4x4 matrix keypad dspic
LTC3710G
4x4 hex keypad
keypad 4x4 c code for pic
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IA06BSF10NO
Abstract: IA06BSF10NC IA06BSF10NCM5 IA06BSF10NOM5 IA06BSF10PO IA06BSF10POM5 IA06BSN20NC IA06BSN20NCM5 IA06BSN20NO IA06BSN20NOM5
Text: Proximity Sensors Inductive Stainless Steel Housing Types IA, Ø6.5 • Miniature Ø6.5 stainless steel housing • Short housing • Sensing distance: 1.0 and 2.0 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching • Protection: Short-circuit, reverse polarity and transients
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TRANSISTOR M5
Abstract: Transistor npn BSF 70
Text: y Proximity Sensors Inductive ant r r a Short body, Stainless Steel Housing sw r a e Types IA, M5 5y • Miniature stainless steel housing M5 • Short body • Sensing distance: 1,2 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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NE243187
Abstract: NE243188
Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The
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NE243
NE24300
NE243187
NE243188
NE243287
NE243288
NE243499
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BUK444-600B
Abstract: 100-P 003US
Text: N AMER PHILIPS/DISCRETE bTE D m bbSBTai 0030540 TOO * A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK444-600B
-SOT186
bbS3T31
0D3D544
BUK444-600B
100-P
003US
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K543
Abstract: BUK543 BUK543-60A BUK543-60B
Text: N AMER P H I L I P S / D I S C R E T E bTE D • 1^ 5 3 ^ 3 1 GDaDTSD Philips Sem iconductors B U K543-60A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic tull-pack
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K543-60A/B
-SOT186
K543
BUK543
BUK543-60A
BUK543-60B
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mbd501
Abstract: CA426
Text: NEWBRIDGE MICROSYSTEMS bSflfllOl O G G C m f l 5SE D b CA426 DC-DC CONVERTER T '5 7 - H Low power High efficiency Few external components Standby supply current typically 1 nA Output switch transistor current to300mA Output current limit protection The CA426 Is a tow power, high efficiency DC-DC Con
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CA426
300mA
CA426
25KHz)
20jisec
36X10^
40x10"
293jiH
mbd501
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Untitled
Abstract: No abstract text available
Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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bbS3T31
BUK543-60A/B
PINNING-SOT186
BUK543
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4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9958
b501130
0Q400bl
4-221
transistor mosfet n-ch drain current
NDS9958
Dual N & P-Channel MOSFET
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SL 100 NPN Transistor
Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures
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BFG590;
BFG590/X;
BFG590/XR
OT143
OT143R
BFG590
BFG590/X
BFG590/XR
BFG590
711DflSb
SL 100 NPN Transistor
n38 transistor
100 n38 transistor base pin
4 pin dual-emitter
SL 100 NPN Transistor base emitter collector
RF TRANSISTOR 2.5 GHZ s parameter
sot143r transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF150 P ow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF150
b72S4
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF241E
O-39/3)
MBA379
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k20s
Abstract: NPN planar RF transistor RZ3135B14W
Text: 7= 3 3 -/'' Philips Components Data sheet status Prelim inary specification date of Issue Jun e 1992 PHILIPS RZ3135B14W NPN silicon planar epitaxial microwave power transistor INTERNAT IONAL FEATURES Sb E D 711Dö2tj • In te rd ig ita te d s tru c tu re ; high
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RZ3135B14W
711002b
D04bSÃ
100fis
T-33-1T
7110aSb
k20s
NPN planar RF transistor
RZ3135B14W
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1DI300ZN-1
Abstract: JE711 JE71 B348 zener ci 5t
Text: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply
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1DI300ZN-120
E82988
Recommen85
1DI300ZN-1
JE711
JE71
B348
zener ci 5t
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Untitled
Abstract: No abstract text available
Text: SPP 47N10 P relim in ary Data SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode • Avalanche rated Drain source voltage ^DS Drain-Source on-state resistance RDS on Continuous drain current b 100 V 0.033 n 47 A • d v/d i rated
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47N10
SPP47N10
P-T0220-3-1
Q67040-S4183
SPB47N10
P-T0263-3-2
Q67040-S4178
S35bQ5
Q133777
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L600M
Abstract: No abstract text available
Text: Panasonic ICs for Motor AN3840NSR VTR Capstan-Drive 1C • Overview AN3840NSR Unit ; mm The AN 3840N SR is an 1C for driving the V T R capstan motor. The reduction of acoustic noise, vibration and torque rip ple of motor can be realized. ■ Features • Output transistor built-in
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AN3840NSR
3840N
24-pin
HSQP024-P-0450)
0D12A03
L600M
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