TRANSISTOR BGS Search Results

TRANSISTOR BGS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BGS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor NEC B 617 Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and	OCR Scan	2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568	PDF
2f5 transistor Abstract: No abstract text available Text: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable	OCR Scan		PDF
RT1N234X Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X Text: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23	OCR Scan	RT1P234X HT1P234X RT1N234X RT1P234T2 RT1P234U RT1P234M RT1P234C SC-53 O-236 RT1N234X RT1P234C RT1P234M RT1P234T2 RT1P234U	PDF
transistor SG 14 Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the	OCR Scan	TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR	PDF
sg transistor Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor" Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage	OCR Scan	TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor"	PDF
Untitled Abstract: No abstract text available Text: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .	OCR Scan	A23SbDS fl53SbOS	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
Untitled Abstract: No abstract text available Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS . DESCRIPTION TO3 Package.	Original	PMD18D100 100APEAK PMD18D100 100mA 300us,	PDF
K 2645 transistor Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645	PDF
TRANSISTOR MARKING CODE R2A Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1 Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage	OCR Scan	DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1	PDF
AN569 Abstract: 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications Text: Order this data sheet by MTG15P10/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Des/gnerfs Data Sheet MTG15PI0 Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, regulahigh speed power switching applications such as switching	Original	MTG15P10/D MTG15PI0 MTH20PI AN104O. AN569 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications	PDF
sot-23 3341 Abstract: transistor bu 126 Text: TELEFUNKEN ELECTRONIC 17E D • a^SQD^b GOD^MMB 5 • ▼ e le c tro n ic CrwttrtTfcchnotogiw' BU 1 26 T - 3 3 - lf Silicon NPN Power Transistor Applications: Voltage regulator, inverter, switching mode power supply Features: • InTripple Diffusion Mesa Technique	OCR Scan	15A3DIN sot-23 3341 transistor bu 126	PDF
transistor C 2615 Abstract: bu526 js 2617 BF56 marking EAAT transistor 526 Text: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique	OCR Scan		PDF
BCW61 Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration	Original	BCW61, BCX71 BCW60, BCX70 120Hz 61/BCX EHP00356 EHP00357 10kHz BCW61 BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF	PDF

BCX71 Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration	Original	BCW61, BCX71 BCW60, BCX70 71KRS 120Hz 61/BCX EHP00356 EHP00357 BCX71 marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN	PDF
Untitled Abstract: No abstract text available Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and	Original	540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3	PDF
bcx71 Abstract: No abstract text available Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration	Original	BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 bcx71	PDF
diode B14A Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070 Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)	OCR Scan	00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070	PDF
transistor 1p3 Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S	OCR Scan	23SbGS BFQ19P 62702-F1060 OT-89 D2Hm35 transistor 1p3 MARKING 19S ic MARKING FZ F1060 e23s	PDF
BCW61FF Abstract: BCs sot23 Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking	Original	OT-23 120Hz BCW61FF BCs sot23	PDF
transistor BC 245 Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126 Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time	OCR Scan	00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126	PDF
71 SOT-23 Abstract: No abstract text available Text: BCW 61, BCX 71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration	Original	OT-23 61/BCX 71 SOT-23	PDF
RT1P240T2 Abstract: RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U RT1P240X Text: R T1P240X SERIES Tr, „ J 7" * F u r S w it c h in g A p p lic a tio n Silicon PNP Epitaxial T ype DESCRIPTION RT1P240X is a OUTLINE one chip transistor DRAWING U N IT m m RT1P240U with b u ilt-ir bias resistor.NPN type is RT1N240X R T1P 240C 2fl „ _ 1J5	OCR Scan	RT1P240X RT1N240X RT1P240T2 RT1P240U RT1P240M RT1P240C O-236 RT1P240T2 RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U	PDF
RT1P431C Abstract: RT1P431M RT1P431S RT1P431U RT1P431X Text: S e m ic o n d u c t o r T r a n s is to r R T 1 P 4 3 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DESCRIPTION HT1P431X is a o n e c h ip t r a n s is t o r UNIT mm DRAWING RT1P431U with b u ilt-in bias resistor.NPN type is RT1N431X	OCR Scan	RT1P431X RT1N431X RT1P431T2 RT1P431U RT1P431M RT1P431C RT1P431C RT1P431M RT1P431S	PDF

TRANSISTOR BGS Search Results

TRANSISTOR BGS Result Highlights (5)

TRANSISTOR BGS Datasheets Context Search

transistor NEC B 617

2f5 transistor

RT1N234X

transistor SG 14

sg transistor

Untitled

ksd 302 250v, 10a

Untitled

K 2645 transistor

TRANSISTOR MARKING CODE R2A

AN569

sot-23 3341

transistor C 2615

BCW61

BCX71

Untitled

bcx71

diode B14A

transistor 1p3

BCW61FF

transistor BC 245

71 SOT-23

RT1P240T2

RT1P431C