TRANSISTOR BFW Search Results

TRANSISTOR BFW Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BFW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
multi-emitter transistor Abstract: BFW16A BFW16 transistors BFW16A are mx hf no VCE18 Text: NPN BFW16A N-P-N H.F. WIDEBAND TRANSISTOR The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.It is a ruggedized version of the BFW16, which it succeds.	Original	BFW16A BFW16A BFW16, multi-emitter transistor BFW16 transistors BFW16A are mx hf no VCE18	PDF
Untitled Abstract: No abstract text available Text: BFW43 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • PNP High Voltage Planar Transistor 2.54 (0.100)	Original	BFW43	PDF
BFW16 Abstract: BFW16A Text: BFW16A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI BFW16 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 150 mA VCBO 40 V VCER 40 V VCEO 25 V VEBO 3.0 V PDISS 0.7 W @ TA = 25 °C	Original	BFW16A BFW16 100mA BFW16A	PDF
BFW17A Abstract: bfw17a philips semiconductor lem HA Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good	OCR Scan	BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA	PDF
BFW16 Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of	OCR Scan	BFW16 Q62702-F319 TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor	PDF
TRANSISTOR BFW 11 Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83 Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use	OCR Scan	053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83	PDF
BFW61 Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357 Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.	OCR Scan	BFW61 200/iA BFW61 FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357	PDF
Transistor BFw 92 Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain	OCR Scan	596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor	PDF
BFW61 Abstract: No abstract text available Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA	OCR Scan	BFW61 btj53T31 357T2 BFW61	PDF
philips BFW30 Abstract: B 1184 BFW30 transistor 1183 IEC134 Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the	OCR Scan	BFW30 711DflSb 004bDEfl philips BFW30 B 1184 BFW30 transistor 1183 IEC134	PDF
BFW30 Abstract: IEC134 Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the	OCR Scan	BFW30 711DflSb 004bDEfl BFW30 IEC134	PDF
BFW16A Abstract: bfw16 transistor bfw16a BFW 16 Text: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V	OCR Scan	UTILI18 BFW16A BFW16A bfw16 transistor bfw16a BFW 16	PDF
Untitled Abstract: No abstract text available Text: Philips Sem iconductors bb53131 □032121 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.	OCR Scan	BFW16A BB364	PDF
Untitled Abstract: No abstract text available Text: PhiNp^Semiconductore^^^^^BI t>bS3 3 1 QQ32133 T21 M APX Product specification NPN 1 GHz wideband transistor BFW17A N AUER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.	OCR Scan	QQ32133 BFW17A MEA33S	PDF

bfw16a philips Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b Text: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.	OCR Scan	UEA368 BFW16A 711002b 004b0S2 UBB364 bfw16a philips BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b	PDF
BFW92 Abstract: philips bfw92 vk200 philips vk200.10 g04b030 Text: Philips Semiconductors Product specification 7 NPN 1 GHz wideband transistor PHILIPS BFW92 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power gain and good intermodulation properties. It is primarily intended for	OCR Scan	BFW92 7110fl2b MEA391 MEA393 BFW92 philips bfw92 vk200 philips vk200.10 g04b030	PDF
BFW16A Abstract: TRANSISTOR C 1177 Transistor D 798 bfw16a philips Text: Philips Semiconductors Product specification T 31 17 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL SbE D DESCRIPTION MING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. 1 The transistor has extremely good intermodulation properties and a	OCR Scan	BFW16A 711082b MBB96S UEAS88 711Qfl2b 4bQ22 BFW16A TRANSISTOR C 1177 Transistor D 798 bfw16a philips	PDF
philips BFW30 Abstract: BFW30 transistor 1183 Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONA L DESCRIPTION BFW30 SbE D • 7110flSb 004fc>G2b 172 * P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the	OCR Scan	3/BFW30 7110fl2b 004b02b 7110aSb philips BFW30 BFW30 transistor 1183	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
transistor 431 N Abstract: TRANSISTOR D 471 BFW92 BFW92A philips bfw92 Text: Product specification Philips Semiconductors '7 ^ 3 / - / 7 NPN 3 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • ^ BFW92A ?110fl2b D D M L D 3 2 47b ■ PHIN PINNING NPN transistor in a plastic SOT37 envelope. PIN It is primarily intended for use in	OCR Scan	BFW92A 110fl2b DDMLD32 BFW92A BFW92 BFW92A/02 transistor 431 N TRANSISTOR D 471 philips bfw92	PDF
BFW92A Abstract: SP 1191 BFW92 transistor BFW92A Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz	OCR Scan	bbS3T31 0D32142 BFW92A BFW92A BFW92 BFW92A/02 SP 1191 transistor BFW92A	PDF
transistor B 1184 Abstract: BFW30 philips BFW30 Text: bbsaqai □□3213b 730 Philips Sem iconductors • ADY Product specification NPN 2 GHz wideband transistor — ^ i BFW30 N bTE T> AMER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a T O -7 2 metal envelope, with insulated electrodes and a shield lead connected to the	OCR Scan	3213b BFW30 aTO-72 transistor B 1184 BFW30 philips BFW30	PDF
BFW92 Abstract: philips bfw92 Text: Philips Semiconductors bbSBRBl GQBSIBR 4MT IH A P X Product specification NPN 1 GHz wideband transistor BFW92 b'lE » N AMER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power	OCR Scan	BFW92 BFW92/02 MB8S16 MEA392 MEA393 BFW92 philips bfw92	PDF
FET BFW61 Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61 Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.	OCR Scan	7110fl2b BFW61 aTO-72 FET BFW61 BFW61 v511 304 fet transistor N CHANNEL FET BFW61	PDF

TRANSISTOR BFW Search Results

TRANSISTOR BFW Result Highlights (5)

TRANSISTOR BFW Datasheets Context Search

multi-emitter transistor

Untitled

BFW16

BFW17A

BFW16

TRANSISTOR BFW 11

BFW61

Transistor BFw 92

BFW61

philips BFW30

BFW30

BFW16A

Untitled

Untitled

bfw16a philips

BFW92

BFW16A

philips BFW30

2sb504

transistor 431 N

BFW92A

transistor B 1184

BFW92

FET BFW61