Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BFR 97 Search Results

    TRANSISTOR BFR 97 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR 97 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR90

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration


    OCR Scan
    Q62702-F560 flB35b05 BFR90 PDF

    Transistor BFR 97

    Abstract: bfr 49 transistor BFR34A
    Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1


    OCR Scan
    Q62702-F346-S1 A23Sb05 D0b7270 Transistor BFR 97 bfr 49 transistor BFR34A PDF

    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


    OCR Scan
    fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79 PDF

    Transistor BFr 99

    Abstract: Transistor BFR 96 transistor 2sc 548
    Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed


    OCR Scan
    fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548 PDF

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan
    pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 PDF

    Transistor BFR 96

    Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
    Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1


    Original
    BFR92 BFR92R D-74025 Transistor BFR 96 Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic PDF

    Transistor BFR 97

    Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
    Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    Original
    Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    Q62702-F1051 OT-23 a23SbQS PDF

    Transistor BFR 96

    Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
    Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar


    OCR Scan
    fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 PDF

    Transistor BFR 90 application

    Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
    Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50


    Original
    BFR90A D-74025 Transistor BFR 90 application Transistor BFR 35 Transistor BFR 90 693 071 010 811 PDF

    BFR 970

    Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
    Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50


    Original
    BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559 PDF

    BFR18

    Abstract: jca amplifier
    Text: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.


    OCR Scan
    BFR18 BFR18 20MHz 300jus, jca amplifier PDF

    lge 673

    Abstract: TRANSISTOR cq 802
    Text: BEE D • 053b3E0 017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802 PDF

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


    OCR Scan
    609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    23b320 BFR35AP 62702-F OT-23 T-31-17 PDF

    BFR92P

    Abstract: No abstract text available
    Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.


    OCR Scan
    0G17GQ2 BFR92P OT-23 BFR92P PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    023b3SQ Q017027 BFR93P OT-23 PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan
    PDF

    FN 1016

    Abstract: MPA 67 MPA1064DH BFR32 B1582 transistor fn 1016 DL201 MPA1016DD MPA1036HI 269 SL3.0/transistor fn 1016
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description Motorola Programmable Array MPA products are a high density, high performance, low cost, solution for your reconfigurable logic needs. When used with our automatic high performance design tools, MPA delivers custom logic


    Original
    MPA1000 MPA1016 MPA1036 DL201 FN 1016 MPA 67 MPA1064DH BFR32 B1582 transistor fn 1016 MPA1016DD MPA1036HI 269 SL3.0/transistor fn 1016 PDF

    fr93

    Abstract: Transistor BFR 96 BFR 36.2
    Text: ViSHAY _ B FR93 A/B FR93 AR/B FR93 AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications W ide band a m plifier up to GHz range. Features • High pow er gain


    OCR Scan
    20-Jan-99 fr93 Transistor BFR 96 BFR 36.2 PDF

    k1377

    Abstract: MPA1064DH B1582 M20214 MPA1064KE MPA1016DD MPA1016FN MPA1000 MPA1036DH MPA1036FN
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description future design migration efforts. The combination of automatic tools and gate level architecture is ideal for traditional schematic driven or high level language based design methodologies. In fact, logic synthesis tools were originally


    Original
    MPA1000 RS232 33MHz X11r5 DL201 k1377 MPA1064DH B1582 M20214 MPA1064KE MPA1016DD MPA1016FN MPA1036DH MPA1036FN PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original
    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    uhf amplifier design BFR90

    Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
    Text: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01


    OCR Scan
    2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91 PDF

    90JG

    Abstract: NSI45090JDT4G HF3-R5570 NSI90J NSI45090JD CONSTANT CURRENT regulator
    Text: NSI45090JDT4G Adjustable Constant Current Regulator & LED Driver 45 V, 90 − 160 mA + 15%, 2.7 W Package The adjustable constant current regulator CCR is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on


    Original
    NSI45090JDT4G NSI45090JD/D 90JG NSI45090JDT4G HF3-R5570 NSI90J NSI45090JD CONSTANT CURRENT regulator PDF