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    TRANSISTOR BFP196 Search Results

    TRANSISTOR BFP196 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFP196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP196TW

    Abstract: No abstract text available
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		PDF BFP196T/BFP196TR/BFP196TW BFP196T BFP196TR 1363t D-74025 BFP196TW

    BFP196T

    Abstract: BFP196TR BFP196TW BFP196
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		PDF BFP196T/BFP196TR/BFP196TW BFP193TRMarking: BFP196TMarking: D-74025 BFP196T BFP196TR BFP196TW BFP196

    BFP196TR

    Abstract: BFP196T BFP196TW
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		PDF BFP196T/BFP196TR/BFP196TW BFP193TRMarking: BFP196TMarking: D-74025 BFP196TR BFP196T BFP196TW

    MARKING w96

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications For low noise, low distortion broadband amplifiers in


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 OT-143R OT-343 OT-143 OT-143R MARKING w96

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    BFP196T

    Abstract: BFP196TR BFP196TW
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343 08-Apr-05 BFP196TW

    BFP196TW

    Abstract: BFP196T BFP196TR
    Text: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour 3 4 2 1 Applications SOT-143R For low noise, low distortion broadband amplifiers in


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 OT-143R OT-343 BFP196T OT-143 OT-343 BFP196TW

    BFP196W

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor 3  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA  Power amplifier for DECT and PCN systems 2  fT = 7.5 GHz 1 VPS05605


    Original     		PDF BFP196W VPS05605 OT343 Jun-22-2001 BFP196W

    BFP196

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 BFP196

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor 3  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA  Power amplifier for DECT and PCN systems 2  fT = 7.5 GHz 1 VPS05605


    Original     		PDF BFP196W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    BFP196

    Abstract: VPS05178
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 900MHz Jun-22-2001 BFP196 VPS05178

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143

    BFP181R

    Abstract: No abstract text available
    Text: BFP196R NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196R OT143R BFP181R

    029998

    Abstract: BFP196W BGA420 38128
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343 029998 BFP196W BGA420 38128

    BFP196W

    Abstract: BGA420
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343 BFP196W BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143

    BFP196

    Abstract: BFP181 transistor bfp196
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143 BFP196 BFP181 transistor bfp196

    CM 1241 siemens

    Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
    Text: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz


    OCR Scan     		PDF BFP196 900MHz Q62702-F1320 OT-143 900MHz CM 1241 siemens transistor b 1238 DECT siemens transistor bf 196 bfp196

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F= 1.5 dB at 900MHz


    OCR Scan     		PDF BFP196W 900MHz Q62702-F1576 OT-343 fl23S 53SLDS G151T7D