NPN/transistor C 331
Abstract: TRANSISTOR bf959 BF959 equivalent BF959 bf959 on BF 331 TRANSISTORS transistor bf 254
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.
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BF959
C-120
BF959Rev100801
NPN/transistor C 331
TRANSISTOR bf959
BF959 equivalent
BF959
bf959 on
BF 331 TRANSISTORS
transistor bf 254
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BF959
C-120
BF959Rev100801
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TRANSISTOR bf959
Abstract: BF 331 TRANSISTORS BF959 BF 183 transistor transistor bf 254
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BF959
C-120
BF959Rev100801
TRANSISTOR bf959
BF 331 TRANSISTORS
BF959
BF 183 transistor
transistor bf 254
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transistor Bf 981
Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency
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BF775
D-74025
transistor Bf 981
transistor BF 257
Transistor 0235 BF
bf 671
transistor BF 236
transistor bf 324
BF 273 transistor
transistor marking zg
bf 695
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BF199
Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor
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M3D186
BF199
SCA55
117047/00/02/pp8
BF199
BF 234 transistor
BP317
data bf199
transistor NPN BF199
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2SC3897
Abstract: 2000M ohm
Text: 2SC3897 SPICE PARAMETER NPN LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 2.24p A ISC A BF 14.0 NC 1.50 NF 0.99 RB 18.0m ohm VAF 52.0 V IRB 4.00 A IKF 4.6 A RBM 70.0m ohm ISE 10.0p A RE 10.0m ohm NE 1.35 RC 12.0m
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2SC3897
27deg
2SC3897
2000M ohm
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transistor M-226
Abstract: CPH6701
Text: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10
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CPH6701
27deg
transistor M-226
CPH6701
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TRANSISTOR T 410
Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl235bOS
Q68000-A5440
Q68000-A5172
Q68000-A5173
Q68000-A5174
Q68000-A5175
BF410B
Vbs-10V
0G04MÃ
BF410D
TRANSISTOR T 410
abf410
DSG52
922S
BF410D
410c
BF410A
BF410C
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BF410C
Abstract: a5175
Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl23SbQS
Q68000-A5440
68000-A5172
68000-A5173
68000-A5174
68000-A5175
0Q044
BF410D
BF410C
a5175
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IC 4556
Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.
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a23SbOS
62702-F
G--14
IC 4556
4556D
transistor Siemens 14 S S 92
GPB16
4556 d
transistor BF 939
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transistor Bf 444
Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Text: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3
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53SbQS
GQa4H73
Q62702-F311
6235bQS
000447b
transistor Bf 444
transistor bf 324
BF324
pnp vhf transistor
TRANSISTOR Bf 522
f324
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BF324
Abstract: oms 450 Q62702-F311 S420
Text: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3
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Q62702-F311
140mS
BF324
oms 450
Q62702-F311
S420
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TRANSISTOR G13
Abstract: c 939 transistor bf 4556 d BF939
Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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Q62702-F
fl235b05
0Q04557
TRANSISTOR G13
c 939
transistor bf
4556 d
BF939
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transistor d 1933
Abstract: transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505
Text: i«ü 1 ESC D • fl23Sb05 OGQHSQI b « S I E G ' -T -3 Ì NPN Silicon RF Transistor SIEMENS AKTIENCESELLSCHAF : 04509 BF 505 0' BF 505 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers in common emitter configuratin, VHF mixers and VHF/UHF oscillators.
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A235bQS
Q62702-F573
transistor d 1933
transistor BF 52
transistor bf
505 transistor
23 505 transistor
BF 500 transistor
Q62702-F573
MSIE
npn 505
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dd127d
Abstract: dd127db marking g5 BF transistor dd127 BF550R Sot-23R hf transistor BF550 SOT23R
Text: Te m ic BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features • • High power gain Low noise figure 1 1 R ^ 2 ET 3 3 2 S49280 95 10527 BF550 Marking: G2 Plastic case SOT 23
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BF550
BF550R
0G12705
DD127Db
dd127d
marking g5
BF transistor
dd127
Sot-23R
hf transistor
SOT23R
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nf950
Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,
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023SbQS
Q62702-F553
nf950
transistor BF 37
transistor BF 236
TRANSISTOR 2SC 950
TRANSISTOR JC 539
2sc 1948 a
Q62702-F553
transistor code mark NF
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BSX51
Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
Text: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant
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h80-540
O-181
BSX51
Transistor BSX 32
Transistor BSX 51
H8054
bsx52
bsw21
52B15
de 001 TRANSISTOR
9mc0
4682
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w26c
Abstract: B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126 15A3DIN
Text: « I TELEFUNKEN ELECTRONIC 17E ]> • 000^35 * BF 883 S TTlILilFISSMIISlM electronic Crutivelfchnotogies T-22-06~ Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /»-drift dependent of temperature
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T0126
15A3DIN
w26c
B120Cnb
B0551
Transistor S 2517
BF 238 transistor
transistor marking code 41 BF
883S
12A3
T0126
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Untitled
Abstract: No abstract text available
Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency
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BF775
6R200Rb
00127E0
BF775
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Untitled
Abstract: No abstract text available
Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency
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BF775
SyS22
BF775
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zq 405-MF
Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFP193
62702-F
OT-143
zq 405-MF
siemens 30 090
GP 819
SAA 1006
saa 1070
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BF 182 transistor
Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
Text: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.
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BF182
-c12e
lY12e|
BF 182 transistor
TRANSISTOR Bf 522
BF182
bf 182
CI 182
Y11E
transistor A11A
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transistor Bc 542
Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Text: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature
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T-33-0S-
JEDECTO126
transistor Bc 542
transistor bc 564
marking EB 202 transistor
transistor A 564
Transistors marking WZ
PM564
2574 transistor
transistor BF 52
SOT-23 marking aeg
883S
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bsw21
Abstract: BSW 32 BSW22A bsw 22 BSW-22 transistor bf 175
Text: PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R BSW 22 , A TRANSISTOR PNP SILIC IU M , PLA N A R E P IT A X IA L Compì, o f BSX 51. A and BSX 52, A - LF amplification A m plification BF • i —2 5 V BSW 21, BSW 22 Low current switching V CEO
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-10mA
bsw21
BSW 32
BSW22A
bsw 22
BSW-22
transistor bf 175
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