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    TRANSISTOR BF 52 Search Results

    TRANSISTOR BF 52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN/transistor C 331

    Abstract: TRANSISTOR bf959 BF959 equivalent BF959 bf959 on BF 331 TRANSISTORS transistor bf 254
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.


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    PDF BF959 C-120 BF959Rev100801 NPN/transistor C 331 TRANSISTOR bf959 BF959 equivalent BF959 bf959 on BF 331 TRANSISTORS transistor bf 254

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF BF959 C-120 BF959Rev100801

    TRANSISTOR bf959

    Abstract: BF 331 TRANSISTORS BF959 BF 183 transistor transistor bf 254
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF BF959 C-120 BF959Rev100801 TRANSISTOR bf959 BF 331 TRANSISTORS BF959 BF 183 transistor transistor bf 254

    transistor Bf 981

    Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
    Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency


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    PDF BF775 D-74025 transistor Bf 981 transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor transistor marking zg bf 695

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


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    PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199

    2SC3897

    Abstract: 2000M ohm
    Text: 2SC3897 SPICE PARAMETER NPN LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 2.24p A ISC A BF 14.0 NC 1.50 NF 0.99 RB 18.0m ohm VAF 52.0 V IRB 4.00 A IKF 4.6 A RBM 70.0m ohm ISE 10.0p A RE 10.0m ohm NE 1.35 RC 12.0m


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    PDF 2SC3897 27deg 2SC3897 2000M ohm

    transistor M-226

    Abstract: CPH6701
    Text: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10


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    PDF CPH6701 27deg transistor M-226 CPH6701

    TRANSISTOR T 410

    Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
    Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


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    PDF fl235bOS Q68000-A5440 Q68000-A5172 Q68000-A5173 Q68000-A5174 Q68000-A5175 BF410B Vbs-10V 0G04MÃ BF410D TRANSISTOR T 410 abf410 DSG52 922S BF410D 410c BF410A BF410C

    BF410C

    Abstract: a5175
    Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


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    PDF fl23SbQS Q68000-A5440 68000-A5172 68000-A5173 68000-A5174 68000-A5175 0Q044 BF410D BF410C a5175

    IC 4556

    Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
    Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.


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    PDF a23SbOS 62702-F G--14 IC 4556 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939

    transistor Bf 444

    Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
    Text: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3


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    PDF 53SbQS GQa4H73 Q62702-F311 6235bQS 000447b transistor Bf 444 transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324

    BF324

    Abstract: oms 450 Q62702-F311 S420
    Text: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3


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    PDF Q62702-F311 140mS BF324 oms 450 Q62702-F311 S420

    TRANSISTOR G13

    Abstract: c 939 transistor bf 4556 d BF939
    Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


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    PDF Q62702-F fl235b05 0Q04557 TRANSISTOR G13 c 939 transistor bf 4556 d BF939

    transistor d 1933

    Abstract: transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505
    Text: i«ü 1 ESC D • fl23Sb05 OGQHSQI b « S I E G ' -T -3 Ì NPN Silicon RF Transistor SIEMENS AKTIENCESELLSCHAF : 04509 BF 505 0' BF 505 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers in common emitter configuratin, VHF mixers and VHF/UHF oscillators.


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    PDF A235bQS Q62702-F573 transistor d 1933 transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505

    dd127d

    Abstract: dd127db marking g5 BF transistor dd127 BF550R Sot-23R hf transistor BF550 SOT23R
    Text: Te m ic BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features • • High power gain Low noise figure 1 1 R ^ 2 ET 3 3 2 S49280 95 10527 BF550 Marking: G2 Plastic case SOT 23


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    PDF BF550 BF550R 0G12705 DD127Db dd127d marking g5 BF transistor dd127 Sot-23R hf transistor SOT23R

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF

    BSX51

    Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
    Text: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant


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    PDF h80-540 O-181 BSX51 Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682

    w26c

    Abstract: B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126 15A3DIN
    Text: « I TELEFUNKEN ELECTRONIC 17E ]> • 000^35 * BF 883 S TTlILilFISSMIISlM electronic Crutivelfchnotogies T-22-06~ Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /»-drift dependent of temperature


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    PDF T0126 15A3DIN w26c B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126

    Untitled

    Abstract: No abstract text available
    Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


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    PDF BF775 6R200Rb 00127E0 BF775

    Untitled

    Abstract: No abstract text available
    Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


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    PDF BF775 SyS22 BF775

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

    BF 182 transistor

    Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
    Text: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.


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    PDF BF182 -c12e lY12e| BF 182 transistor TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A

    transistor Bc 542

    Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
    Text: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature


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    PDF T-33-0S- JEDECTO126 transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S

    bsw21

    Abstract: BSW 32 BSW22A bsw 22 BSW-22 transistor bf 175
    Text: PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R BSW 22 , A TRANSISTOR PNP SILIC IU M , PLA N A R E P IT A X IA L Compì, o f BSX 51. A and BSX 52, A - LF amplification A m plification BF • i —2 5 V BSW 21, BSW 22 Low current switching V CEO


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    PDF -10mA bsw21 BSW 32 BSW22A bsw 22 BSW-22 transistor bf 175