TRANSISTOR BF 175 Search Results

TRANSISTOR BF 175 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BF 175 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Q62702-F979 Abstract: BF599 Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter	Original	PDF	Q62702-F979 OT-23 Iy21e Q62702-F979 BF599
transistor marking zg Abstract: BF579 BF579R HF transistor Text: BF 579 / BF 579 R TELEFUNKEN Semiconductors Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 2 94 9280 BF579 Marking Plastic case SOT 23	Original	PDF	BF579 BF579R D-74025 transistor marking zg HF transistor
telefun Abstract: transistor Bf 979 BF979 Text: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking	Original	PDF	BF979 D-74025 telefun transistor Bf 979
transistor bc 7-40 Abstract: No abstract text available Text: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR	Original	PDF	BP173 200mA 35MHz transistor bc 7-40
BF115 Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC Text: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti	OCR Scan	PDF	-c12e -V12eCC) ----C22e BF115 BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
BF173 Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor Text: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est	OCR Scan	PDF	BF173 BF173 BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
BF180 Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti	OCR Scan	PDF	BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
BF167 Abstract: ST CB4 pbgi J BF167 bf 167 AF1V OF BF167 transistor f 482 Text: BF167 NPN S IL IC O N T R A N S IS T O R S , P LA N A R TRANSISTORS NPN SILICIUM , PLANAR The NPN planar transistor BF 167 is intended for use in IF video amplifiers AGC controlled stage of television receivers. Le transistor NPN planar BF 167 est destiné aux amplifica	OCR Scan	PDF	BF167 45---------Tamb BF167 ST CB4 pbgi J BF167 bf 167 AF1V OF BF167 transistor f 482
Q62702-F550 Abstract: bf599 Text: NPN Silicon RF Transistor • • BF 599 Suitable for common em itter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Type Marking Ordering code for versions In bulk Ordering code ior versions on 8 mm-tape Package BF 599 NB	OCR Scan	PDF	Q62702-F550 Q62702-F979 102mA Q62702-F550 bf599
Untitled Abstract: No abstract text available Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings	OCR Scan	PDF	Q62702-F979 OT-23 EHT07072
transistor BF 199 Abstract: BF 199 bf199 transistor A11A Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter	OCR Scan	PDF	Q62702-F355 D0bb74b 23SbGS DDbb747 00bb74fl transistor BF 199 BF 199 bf199 transistor A11A
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	PDF	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
s22b Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili	OCR Scan	PDF	BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
TFK 840 Abstract: BF167 TRANSISTOR tfk 840 TFK 105 A1187 AMB-45 Text: BF 167 Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am plifier stages in com m on em itter configuration Besondere Merkmale: Features:	OCR Scan	PDF

transistor bf 185 Abstract: BF185 bf 185 BF 185 transistor coe br Text: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB	OCR Scan	PDF
BF173 Abstract: BF173 Transistor 3430J to-72j 364MHz Text: Ul BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO E E E L —EECDTTROrsllCSS CASE T 0 -7 2 J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	BF173 O-72J 200mA TELEX-33510 430J81 35MHz BF173 Transistor 3430J to-72j 364MHz
Untitled Abstract: No abstract text available Text: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	T0-72J BF173 200mA 09g4g3 35MHz
BF173 Transistor Abstract: BF173 Text: BF 173 IV! I C R a NPN SILICON PLANAR EPITAXIAL TRANSISTOR Œ L_Œ C T"F* o r s i I C S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	BF173 T0-72J 200mA 10jiA 100MHz BF173 Transistor
Transistor BFT 96 Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884 Text: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain	OCR Scan	PDF	q0q532q 0484E1 ft-11 569-GS 000s154 hal66 if-11 Transistor BFT 96 bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
2N699 Abstract: H12B coutant Text: 2N699 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L - LF amplification A m p lifica tio n BF 80 V V CER - Switching Commutation ^21E niA 50 MHz fT Case TO-39 Maximum power dissipation min. — See outline drswing CB-7 on last pages	OCR Scan	PDF	2N699 2N699 H12B coutant
Untitled Abstract: No abstract text available Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking	OCR Scan	PDF	0Qlb747 Q62702-F550 Q62702-F979 T-31-17 23b320
2N 2905a pnp transistor Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A Text: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO	OCR Scan	PDF	2N2905 2N 2905a pnp transistor 2904 st 2904 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
BSX51 Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682 Text: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant	OCR Scan	PDF	h80-540 O-181 BSX51 Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
zq 405-MF Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070 Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

TRANSISTOR BF 175 Search Results

TRANSISTOR BF 175 Result Highlights (5)

TRANSISTOR BF 175 Datasheets Context Search

Q62702-F979

transistor marking zg

telefun

transistor bc 7-40

BF115

BF173

BF180

BF167

Q62702-F550

Untitled

transistor BF 199

97CC

s22b

TFK 840

transistor bf 185

BF173

Untitled

BF173 Transistor

Transistor BFT 96

2N699

Untitled

2N 2905a pnp transistor

BSX51

zq 405-MF