Untitled
Abstract: No abstract text available
Text: Temic U2791B TELEFUNKEN Semiconductors 100-MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2791B
100-MHz
U2791B
SSO-20
D-74025
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Untitled
Abstract: No abstract text available
Text: V1SHAY Vishay Telefunken ▼ Assembly Instructions on the ratio of component’s mass to an As-Irradiated surface. General Optoelectronic semiconductor mounted in any position. devices can be Connecting wires of less than 0.5 mm diameter may be bent, provided the bend is not less than 1.5 mm
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s 8550 d
Abstract: telefunken ra 100 SCT23
Text: DZ23C2V7-DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features • SO T-23 surface mount package • 300 mW power dissipation rating • Ideally suited for automatic insertion • AVz for both diodes in one case is < 5% • Common anode style available see AZ series
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DZ23C2V7-DZ23C51
01-Apr-99
FaxBa35
01-Apr-99
SCT-23
s 8550 d
telefunken ra 100
SCT23
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SOD JEDEC
Abstract: No abstract text available
Text: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter
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BAS85
50mmx50mmx1
01-Apr-99
BAS85_
-April-99
SOD JEDEC
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Untitled
Abstract: No abstract text available
Text: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C
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BAS86
50mmx50mmx1
01-Apr-99
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BB205
Abstract: No abstract text available
Text: VISHAY Vishay Telefunken Voltage Regulator Diodes and Z-diodes A voltage regulator diode is a diode which develops an essentially constant voltage across its terminals throughout a specified current range. Special reverse-biased diodes known as Z-diodes and
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BA479G
BA679.
BB205
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Untitled
Abstract: No abstract text available
Text: T VISHAY Vishay Telefunken te c h n ic a l d r a w in g s a c c o r d i n o to D IN sp e c ific a t io n s Figure 102 ^ C a s e op en t e c h n ic a l d r a w ir t q s a c c o r d i n o t o D IM s p é c if ic a t io n s +t- Figure 105 96 12097 t e c h n ira l d r a w in g s
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N4 TAM
Abstract: Telefunken LED
Text: T e m ic TELEFUNKEN Semiconductors TLL.540. Low Current LED in 0 5 mm Tinted Diffused Package Color High efficiency red Yellow Green TVpe TLLR540. TLLY540. TLLG540. Technology GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half intensity ±qp 25° Features
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TLLR540.
TLLY540.
TLLG540.
N4 TAM
Telefunken LED
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diode nomenclature
Abstract: high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"
Text: Vishay Telefunken VI^UVY Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material W20 P Serial number Function The first letter indicates the material used for the active
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TLHR5401AS12.
diode nomenclature
high frequency diode
Low frequency power transistor
"tunnel diode" oscillator
"high frequency Diode"
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bc815
Abstract: BC815-25 9600 baud rate converter
Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for
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OIM3232
OIM3232
4000-series
4000-series
RS232
TN0201T
-Apr-99
bc815
BC815-25
9600 baud rate converter
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IR5H
Abstract: diode ir01
Text: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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MCL4154
1N4154
01-Apr-99
IR5H
diode ir01
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Untitled
Abstract: No abstract text available
Text: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic
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BZM55C.
BZT55C.
300K/W
e970-5600
01-Apr-99
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silicon carbide LED
Abstract: silicon carbide
Text: T e m ic TLHB44Ô0 TELEFUNKEN Semiconductors High Efficiency Blue LED, 0 3 mm Tinted Diffused Package Color Blue Technology Type TLHB4400 SiC Angle of Half Intensity ±*p 25° Description The TLHB4400 is a silicon carbide LED with 470 nm peak wavelength. It is housed in a 3 mm tinted diffused plastic package.
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TLHB44
TLHB4400
TLHB4400
silicon carbide LED
silicon carbide
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ic 4072
Abstract: ic 4072 pin diagram 8 PIN 4072 4072B 4072bt R 937 4072
Text: Tem ic U 4072 B TELEFUNKEN Semiconductors T\vo-Tone Ringer for Telephone Sets Description The two-tone ringing circuit in conjunction with a piezo transducer replaces the norm al electrom echanical telephone bell. It is operated with the ringing current from the exchange. However, there
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D-74025
ic 4072
ic 4072 pin diagram
8 PIN 4072
4072B
4072bt
R 937
4072
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1F8A
Abstract: telefunken ta 250 telefunken ta 350 6 dip smps ic
Text: Te m ic BYT08P/600A/800A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Fast reverse recovery time
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BYT08P/600A/800A
1F8A
telefunken ta 250
telefunken ta 350
6 dip smps ic
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Untitled
Abstract: No abstract text available
Text: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications
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TZM5221
TZM5267B
1N5221
N5267B
50mmx50mmx1
01-Apr-99
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U210B
Abstract: U208B temic triac dip 16 Phase Control dip14 SCR IC DIP14 DIP18 U211B triac control Temic u208b
Text: TELEFUNKEN Semiconductors 04.96 Note: C o l l w t u r m o l n i s U n i v e r s a l a n d L C - 9 u s.e s I C s w i l h r e i r i g g e r C a p a n l i v e m o lo r s u s e s l ( 's w i t h o u t r e i r i g g e r O h m i c a n d i n d u c l i v r lo a d : R e i r i g g e r a n d n o r e m g g e r is p o s s i b l e
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DIP16
U208B
DIP/S08
U210B
DIP14
U2010B
U211B
DIP18/
temic triac dip 16
Phase Control dip14
SCR IC DIP14
DIP18
U211B triac control
Temic u208b
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Untitled
Abstract: No abstract text available
Text: Te m ic TLHE5800 TELEFUNKEN Semiconductors High Intensity LED, 0 5 mm Untinted Non-Diffused Type Color Yellow TLHE5800 Technology AlInGaP on GaAs Angle of Half Intensity ±<j> 4° Description This device has been designed to meet the increasing de mand for extremely bright yellow LEDs.
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TLHE5800
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Untitled
Abstract: No abstract text available
Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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LL4151_
1N4151
50mmx50mmx1
01-Apr-99
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tj1k
Abstract: No abstract text available
Text: Tem ic BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings
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BYX82.
BYX86
BYX83
BYX85
tj1k
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Untitled
Abstract: No abstract text available
Text: Vishay Telefunken Table of C ontents G eneral Information . 5 A lph anu m eric Index .
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Untitled
Abstract: No abstract text available
Text: _ BB804 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios Absolute Maximum Ratings
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BB804
100MHz
01-Apr-99
OT-23
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BA979
Abstract: No abstract text available
Text: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current
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BA979
BA979S
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: Te m ic BYT86/1300 TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passiv ated • L ow sw itch on p o w e r losses • G o o d soft reco v ery b e h a v io u r • F ast forw ard reco v ery tim e
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BYT86/1300
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