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    TRANSISTOR BD 375 Search Results

    TRANSISTOR BD 375 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 375 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    transistor BD 325

    Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA
    Text: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE


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    PDF BD157/D* BD157/D transistor BD 325 BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing


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    PDF IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of


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    PDF IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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    ACT361US-T

    Abstract: FSCR ic 230v dc 8a rectifier diode
    Text: ACT361 Rev 8, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator The ACT361 ensures safe operation with complete protection against all fault conditions. Built-in protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and


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    PDF ACT361 14-Nov-12 ACT361 ACT361US-T FSCR ic 230v dc 8a rectifier diode

    dell lcd 17 power supply diagram

    Abstract: DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors
    Text: IZ8057 MULTI MELODY GENERATOR WITH ACCOMPANEMENT DESCRIPTION The IZ8057 series is a CMOS LSI chip designed for use in advance clock products. It is designed to play the melodies according to previously programmed information. The IZ8057 is capable of generating songs


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    PDF IZ8057 IZ8057 dell lcd 17 power supply diagram DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


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    PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    BD429

    Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in


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    PDF fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor

    Q62702-D1070

    Abstract: TRANSISTOR D 1785 BD430
    Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    PDF T-33-/7 Q62702-D1070 fl23Sb05 Q0043b2 BD430 Q62702-D1070 TRANSISTOR D 1785 BD430

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    bd379

    Abstract: No abstract text available
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD376, BD 378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage C ollecto r E m itter Voltage Sym bol BD375


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    PDF BD375/377/379 BD376, BD380 BD375 BD377 BD379 ELEC350ns, bd379

    BD377

    Abstract: BD375 BD379 BD376 BD378 BD380 BD-375 transistor 377
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD376, BD 378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage C ollector E m itter Voltage Symbol BD375


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    PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 BD377 BD379 BD376 BD-375 transistor 377

    BD375

    Abstract: BD376 BD377 BD378 BD379 BD380
    Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 50 V - 75 V - 100 V - 45 V : BD378 - 60 V


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    PDF BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 BD375 BD378 BD380

    transistor BD 325

    Abstract: transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data BD157 TRANSISTOR 158
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 2 5 0 -3 0 0 -3 5 0 VOLTS


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    PDF BD157 BD158 BD159 transistor BD 325 transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data TRANSISTOR 158

    8D438

    Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
    Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary


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    PDF b3b7E54 BD434, BD436 BD438, BD440 BD442 BD433/435/437/439/441. 8D438 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    TIP 29 transistor

    Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
    Text: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature


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    PDF TIP32, T1P32A, TIP32B. TIP32C TIP31, TIP31A, TIP31B, TIP31C TIP32 TIP32A TIP 29 transistor TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


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    PDF 625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055

    transistor BD 378

    Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
    Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.


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    PDF BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N