623SBQS Search Results

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

C67078-A1611-A2

Abstract: KDS 4K
Contextual Info: ÔÔD D • 623SbQS 001457b S BISIEi^ 88D 14576 D BUZ 38 _ SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage /os = 200 V /„ =18A Continuous drain current Draln-source on-resistance ^DS on = 0,12 SI Description SIPMOS, N-channel, enhancement mode

doz 112

Abstract: V2000G 235L
Contextual Info: SIEM EN S 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation

Contextual Info: LS 5420 y e l l o w LY 5420 GREEN LG 5410 SIEMENS SUPER-RED T13/4 5 mm LED Lamp Dimensions in inches (mm) Surface not Hat .232 (6.9) .024 (0.6) .016(0.4) . .307 (7.8) .295 (7.5) .031 (0.8) .020(0.5) .100 (2.54) . - 2 0 0 (5 .1 ) a . 169(4.8) T .071 (1.8)

b32560d

Contextual Info: B 32 560 . B 32 564 Metallized Polyester Film Capacitors MKT Uncoated (Silver Caps) Extremely small dimensions Versions with special dimensions can be supplied at short notice Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology

Contextual Info: SIEMENS Memory Time Switch Large MTSL PEB 2047 PEB 2047-16 Preliminary Data 1 CMOS IC Features • Non-blocking tim e/space switch for 2048-, 4096-, 8192- or 16 384-kbit/s PCM systems • Different modes programm able for input and output separately • Configurable for a 4096-kHz, 8192-kHz or 16 384-kHz

Germanium power

Abstract: gpb19
Contextual Info: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended

BUZ17

Abstract: C67078-A1600-A2
Contextual Info: aâD D • ÔEBSbDS OOlMMÖb 4 ■ S I E G 8ÔD 14486 . D T ~ 3 ^ - / 3 BUZ 17 _SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage VM Continuous drain current h Drain-source on-reslstance ^DS on Description Case 50V 32 A 0,04 n

AF289

Abstract: Q62701-F92 Germanium Transistor Germanium power
Contextual Info: ESC D • Ô235b05 DÜQ4QÖ3 ^ « S I E G PIMP Germanium UHF Transistor AF289 - SIEMENS AKTIENGESELLSCHAF - -T-JN07 AF 289 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly intended

A6 9008 ADM

Abstract: sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A
Contextual Info: SIEM ENS 8-Bit CMOS Microcontroller C517A Advanced Inform ation Full upward com patibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers

TLE4971

Contextual Info: bOE ]> • A235bDS DQSD7DS TD2 WMZI ZG SIEMENS SIEMENS AKTI EN6ESELLSCHAF Differential Hall Effect Sensor 1C TLE 4971 Preliminary Data Bipolar IC Features • • • • • • • Static operation zero speed Digital output signal Two-wire and three-wire configuration possible

Siemens PEB 2070

Abstract: siemens sbc 28.4 SBC 28.2 SIEMENS ISDN IOM interface siemens sbc 28.3
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D • 6235b05 DD3bll7 b H S I E G S IE M E N S -7 ' H ISDN Communication Controller ICC Preliminary Data f - t S PEB 2070 CMOS IC Type Ordering Code Package PEB 2070-C PEB 2070-N PEB 2070-P Q67100-H8328 Q67100-H8394 Q67100-H2953

Contextual Info: ñ EBSbOS SIEMENS GDTSmS GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump

siemens igbt BSM 75 gb 100

Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
Contextual Info: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D

Contextual Info: SIEMENS BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 2 P in i

13t smd transistor

Contextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4268 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Low-drop voltage Watchdog Settable reset threshold Overtemperature protection Reverse polarity protection