TRANSISTOR BC 320 Search Results

transistor bc 318

Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
Contextual Info: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol

transistor bc 102

Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

transistor bc 102

Abstract: TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC337 BC338 BC 170 transistor BC 2001 transistor
Contextual Info: HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-drlver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

TRANSISTOR BC 384

Abstract: bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347
Contextual Info: 6091788 MICRO ELECTRO N I C S f.QRP 05 _ 820 0 0 6 4 4 D E j b O c] 1 7 ñ ñ 0 7 1 2 ^ - / 7 000Gb44 E | Low Level and General Purpose Amplifiers P O LA R IT Y CASE 251 252 253 256 257 P P P P P TO-92F TO-92F TO-92F TO-92F TO-92B 300 300 300 300 300

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­

transistor BC 584

Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

bc 617 transistor equivalent

Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
Contextual Info: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

BC 148 transistor

Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Contextual Info: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

C557B

Abstract: C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC556,B BC557,A,B,C BC558B PNP Silicon M AXIMUM RATINGS Symbol BC556 BC557 BC558 Collector-E m itter Voltage VCEO -6 5 -4 5 -3 0 Vdc C o llecto r-B ase Voltage v CB O -6 0 -5 0 -3 0 Vdc E m itte r-B a s e Voltage

BC 114 transistor

Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

bc 357 transistor datasheet

Abstract: bc 309 b transistor BC307 bc 357 transistor BC308 BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

TRANSISTOR BC 545

Abstract: transistor bc 132 transistor bc 248 transistor fall time CIRCUITS OF TRANSISTOR BC 547
Contextual Info: CNY17F SIEMENS • FEATURES • High Currei Transfer Ratio CNY17F-1,40-fi0% CNY17F-2, S&12S% I CNY17F-3,100-200% CNY17F-4,160-320% • Breakdown Voltage, 5300VACRUS • High Collector-Emitter Vltottage • Vceo=70V • No BaseTermlnal Connection for Improved

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor smd 5DW 73

Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
Contextual Info: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2