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    TRANSISTOR BC 120 Search Results

    TRANSISTOR BC 120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW PDF

    857T

    Abstract: 857BT
    Text: BC 857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs


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    VPS05996 857AT 857BT SC-75 SC-75 EHP00381 EHP00380 Apr-20-2000 EHP00382 EHP00379 857T 857BT PDF

    857T

    Abstract: BC857AT BC857BT SC-75
    Text: BC 857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs


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    857AT SC-75 857BT VPS05996 EHP00381 EHP00380 Nov-03-1999 EHP00382 EHP00379 857T BC857AT BC857BT SC-75 PDF

    MPSL01

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL01 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage VCEO 120


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    ISO/TS16949 MPSL01 C-120 MPSL01 PDF

    2N5400

    Abstract: transistor 2N5400
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE


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    2N5400 C-120 2N5400Rev100104E 2N5400 transistor 2N5400 PDF

    transistor bc 318

    Abstract: 2N5400
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    2N5400 C-120 2N5400Rev100104E transistor bc 318 2N5400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    2N5400 C-120 2N5400Rev100104E PDF

    MPSL01

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL01 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage


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    MPSL01 C-120 MPSL01 PDF

    transistor bc 146

    Abstract: transistor bc 570 transistor bc 630
    Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing


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    BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630 PDF

    transistor mps6531

    Abstract: MPS6530 MPS6531
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO


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    ISO/TS16949 MPS6530 MPS6531 C-120 MPS6530 6531Rev281102E transistor mps6531 MPS6531 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


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    MPS6530 MPS6531 C-120 MPS6530 6531Rev281102E PDF

    MPS6530

    Abstract: MPS6531
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


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    MPS6530 MPS6531 C-120 MPS6530 6531Rev281102E MPS6531 PDF

    MPS5172

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL VALUE UNITS Collector Emitter Voltage


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    ISO/TS16949 MPS5172 C-120 MPS5172 180302D PDF

    5Cs transistor

    Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
    Text: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package


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    07-16W BC817W, BC818W Q62702-C2325 OT-323 07-25W Q62702-C2326 07-40W 5Cs transistor Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328 PDF

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660 PDF

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15 PDF

    transistor BC 308

    Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
    Text: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low


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    BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308 PDF

    transistor bc 100

    Abstract: BC215 BC 215
    Text: BC 215 B NP SILICON TRANSISTOR, EP ITAXIAL PLANAR RANSISTOR PNP SILIC IU M , PLAN A R E P IT A X IA L ha PNP planar épitaxial BC 215 B is intended ar général purpose ? transistor PNP planar BC 215 B est destiné aux •âges généraux CD >° -5 0 V —500 mA


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    PDF

    transistor Bc 230

    Abstract: bc393 bc 393
    Text: BC 393 SILICON PLANAR PNP HIGH VOLTAGE A M PLIFIER The BC 393 is a silicon planar epitaxial PNP transistor in Jedec: T O -1 8 metal case, designed fo r general purpose high-voltage arid video am plifier applications. The com plementary NPN type is the BC 394.


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    -100V -10MA transistor Bc 230 bc393 bc 393 PDF

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


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    BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC PDF

    Untitled

    Abstract: No abstract text available
    Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e


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    BC558 BC556 270TYP 050TYP PDF

    transistor bc 146

    Abstract: transistor bc 570 BC146G BC146 bc 477 transistor 146R X10-4 transistor bc 100 Bc 140 transistor low noise transistor bc
    Text: BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR I COLOR DOT MECHANICAL OUTLINE GENERAL DESCRIPTION M T-42 Y — YELLOW ,G - GREEN 1.8 The BC 146 is a NPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing


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    BC146 BC146 8933M transistor bc 146 transistor bc 570 BC146G bc 477 transistor 146R X10-4 transistor bc 100 Bc 140 transistor low noise transistor bc PDF

    transistor bc 146

    Abstract: transistor bc 570 BC146 TRANSISTOR BC 550 c Package MT-42 146R BC146G X10-4 TRANSISTOR BC 550 b Z15K
    Text: BC146 MINIATURE NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR 1 COLOR DOT MECHANICAL OUTLINE GENERAL DESCRIPTION M T-42 The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment


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    BC146 BC146 z-15K BC146G transistor bc 146 transistor bc 570 TRANSISTOR BC 550 c Package MT-42 146R X10-4 TRANSISTOR BC 550 b Z15K PDF

    2SC1815

    Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
    Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL


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    2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR PDF